MT40A2G4TRF-093E Datasheet, PDF (1/13 Pages) Micron Technology – TwinDie 1.2V DDR4 SDRAM

8Gb: x4, x8 TwinDie DDR4 SDRAM
Description
TwinDie™ 1.2V DDR4 SDRAM
MT40A2G4 – 128 Meg x 4 x 16 Banks x 2 Ranks
MT40A1G8 – 64 Meg x 8 x 16 Banks x 2 Ranks
Description
The 8Gb (TwinDie™) DDR4 SDRAM uses
Micron’s 4Gb DDR4 SDRAM die (essentially two ranks
of the 4Gb DDR4 SDRAM). Refer to Micron’s 4Gb
DDR4 SDRAM data sheet for the specifications not in-
cluded in this document. Specifications for base part
number MT40A1G4 correlate to TwinDie manufactur-
ing part number MT40A2G4; specifications for base
part number MT40A512M8 correlate to TwinDie man-
ufacturing part number MT40A1G8.
Features
• Uses 4Gb Micron die
• Two ranks (includes dual CS#, ODT, and CKE balls)
• Each rank has 4 groups of 4 internal banks for con-
current operation
• V_DD = V_DDQ = 1.2V (1.14–1.26V)
• 1.2V V_DDQ-terminated I/O
• JEDEC-standard ball-out
• Low-profile package
• T_C of 0°C to 95°C
– 0°C to 85°C: 8192 refresh cycles in 64ms
– 85°C to 95°C: 8192 refresh cycles in 32ms
Options
• Configuration
– 64 Meg x 4 x 16 banks x 2 ranks
– 32 Meg x 8 x 16 banks x 2 ranks
• FBGA package (Pb-free)
– 78-ball FBGA
(9.5mm x 11.5mm x 1.2mm) Die
Rev :A
• Timing – cycle time¹
– 0.833ns @ CL = 16 (DDR4-2400)
– 0.833ns @ CL = 17 (DDR4-2400)
– 0.937ns @ CL = 15 (DDR4-2133)
– 0.937ns @ CL = 16 (DDR4-2133)
• Self refresh
– Standard
• Operating temperature
– Commercial (0°C ≤ T_C ≤ 95°C)
• Revision
Note: 1. CL = CAS (READ) latency.
Marking
2G4
1G8
TRF
-083E
-083
-093E
-093
None
None
:A
Table 1: Key Timing Parameters
Speed Grade
-083E¹
-083¹
-093E
-093
Data Rate (MT/s)
2400
2400
2133
2133
Target ^tRCD-^tRP-CL
16-16-16
17-17-17
15-15-15
16-16-16
Note: 1. Backward compatible to 2133, CL = 15
t_{RCD (ns)}
13.32
14.16
14.06
15
t_{RP (ns)}
13.32
14.16
14.06
15
CL (ns)
13.32
14.16
14.06
15
PDF: 09005aef8549206e
DDR4_8Gb_x4_x8_2CS_TwinDie.pdf - Rev. B 09/15 EN
1
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Products and specifications discussed herein are subject to change by Micron without notice.