MT16VDDT6464AG Datasheet, PDF (1/35 Pages) Micron Technology – DDR SDRAM UNBUFFERED DIMM

256MB, 512MB, 1GB, 2GB (x64, DR)
184-PIN DDR SDRAM UDIMM
DDR SDRAM
UNBUFFERED DIMM
MT16VDDT3264A – 256MB
MT16VDDT6464A – 512MB
MT16VDDT12864A
MT16VDDT25664A
–
–
1GB
2GB
(ADVANCE)^‡
For the latest data sheet, please refer to the Micron^ Web
site: www.micron.com/products/modules
Features
• 184-pin, dual in-line memory module (DIMM)
• Fast data transfer rates: PC2100 or PC2700
• Utilizes 266 MT/s and 333 MT/s DDR SDRAM
components
• 256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB
(128 Meg x 64), and 2GB (256 Meg x 64)
• VDD = VDDQ = +2.5V
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/
received with data—i.e., source-synchronous data
capture
• Differential clock inputs (CK and CK#)
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 15.6µs (256MB), 7.8125µs (512MB, 1GB, and 2GB)
maximum average periodic refresh interval
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
Figure 1: 184-Pin DIMM (MO-206)
Standard 1.25in. (31.75mm)
Low-Profile 1.15in. (29.21mm)
OPTIONS
MARKING
• Package
184-pin DIMM (standard)
G
184-pin DIMM (lead-free)¹
Y
• Memory Clock, Speed, CAS Latency²
6ns/166MHz (333 MT/s) CL = 2.5
7.5ns/133 MHz (266 MT/s) CL = 2
7.5ns/133 MHz (266 MT/s) CL = 2
-335
-262¹
-26A¹
7.5ns/133 MHz (266 MT/s) CL = 2.5
-265
• PCB
Standard 1.25in. (31.75mm)
See page 2 note
Low-Profile 1.20in. (30.48mm)
See page 2 note
NOTE: 1. Consult Micron for product availability.
2. CL = CAS (READ) Latency.
Table 1: Address Table
Refresh Count
Row Addressing
Device Bank Addressing
Device Configuration
Column Addressing
Module Rank Addressing
256MB
4K
4K (A0–A11)
4 (BA0, BA1)
128Mb (16 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
512MB
8K
8K (A0–A12)
4 (BA0, BA1)
256Mb (32 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
1GB
8K
8K (A0–A12)
4 (BA0, BA1)
512Mb (64 Meg x 8)
2K (A0–A9, A11)
2 (S0#, S1#)
2GB
8K
16K (A0–A13)
4 (BA0, BA1)
1Gb (128 Meg x 8)
2K (A0–A9, A11)
2 (S0#, S1#)
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
1
©2004 Micron Technology, Inc.
‡_{PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY}
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.