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MT16VDDF6464H Datasheet, PDF (1/31 Pages) Micron Technology – SMALL-OUTLINE DDR SDRAM DIMM | |||
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SMALL-OUTLINE
DDR SDRAM DIMM
512MB, 1GB (x64)
200-PIN DDR SODIMM
MT16VDDF6464H â 512MB
MT16VDDF12864H â 1GB
For the latest data sheet, please refer to the MicronâWeb
site: www.micron.com/moduleds
Features
⢠200-pin, small-outline, dual in-line memory
module (SODIMM)
⢠Fast data transfer rates: PC1600, PC2100, and PC2700
⢠Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR
SDRAM components
⢠512MB (64 Meg x 64), 1GB (128 Meg x 64)
⢠VDD = VDDQ = +2.5V
⢠VDDSPD = +2.3V to +3.6V
⢠2.5V I/O (SSTL_2 compatible)
⢠Commands entered on each positive CK edge
⢠DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
⢠Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
⢠Bidirectional data strobe (DQS) transmitted/
received with dataâi.e., source-synchronous data
capture
⢠Differential clock inputs CK and CK#
⢠Four internal device banks for concurrent operation
⢠Programmable burst lengths: 2, 4, or 8
⢠Auto precharge option
⢠Auto Refresh and Self Refresh Modes
⢠7.8125µs maximum average periodic refresh interval
⢠Serial Presence Detect (SPD) with EEPROM
⢠Programmable READ CAS latency
⢠Gold edge contacts
Table 1: Address Table
Refresh Count
Device Row Addressing
Device Bank Addressing
Device Configuration
Device Column Addressing
Module Rank Addressing
Figure 1: 200-Pin SODIMM (MO-224)
512MB Module
1GB Module
OPTIONS
⢠Package
200-pin SODIMM (standard)
200-pin SODIMM (lead-free)1
⢠Frequency/CAS Latency2
167 MHz (333 MT/s) CL = 2.5
133 MHz (266 MT/s) CL = 2
133 MHz (266 MT/s) CL = 2
133 MHz (266 MT/s) CL = 2.5
100 MHz (200 MT/s) CL = 2
MARKING
G
Y
-335
-262
-26A
-265
-202
NOTE: 1. Contact factory for availability of lead-free prod-
ucts.
2. CL = CAS (READ) latency.
512MB
8K
8K (A0âA12)
4 (BA0, BA1)
32 Meg x 8
1K (A0âA9)
2 (S0#, S1#)
1GB
8K
8K (A0âA12)
4 (BA0, BA1)
64 Meg x 8
2K (A0âA9, A11)
2 (S0#, S1#)
09005aef80a646bc
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN
1
©2003 Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
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