|
M58BW016FB7T3T Datasheet, PDF (1/70 Pages) Micron Technology – 16 Mbit (512 Kbit x 32, boot block, burst) | |||
|
M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
16 Mbit (512 Kbit x 32, boot block, burst)
3 V supply Flash memories
Features
Supply voltage
â VDD = 2.7 V to 3.6 V for program, erase
and read
â VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O
buffers
â VPP = 12 V for fast program (optional)
High performance
â Access times: 70, 80 ns
â 56 MHz effective zero wait-state burst read
â Synchronous burst read
â Asynchronous page read
Hardware block protection
â WP pin for write protect of the 2 outermost
parameter blocks and all main blocks
â RP pin for write protect of all blocks
Optimized for FDI drivers
â Fast program / erase suspend latency
time < 6 µs
â Common Flash interface
Memory blocks
â 8 parameters blocks (top or bottom)
â 31 main blocks
Low power consumption
â 5 µA typical deep power-down
â 60 µA typical standby for M58BW016DT/B
150 µA typical standby for M58BW016FT/B
â Automatic standby after asynchronous
read
Electronic signature
â Manufacturer code: 20h
â Top device code: 8836h
â Bottom device code: 8835h
100 K write/erase cycling + 20 years data
retention (minimum)
High reliability level with over 1 M write/erase
cycling sustained
PQFP80 (T)
LBGA
LBGA80 10 Ã 12 mm
RoHS packages available
July 2011
Rev 18
1/70
www.numonyx.com
1
|
▷ |