M29F800FB55N3E2 Datasheet, PDF (1/55 Pages) Micron Technology – Micron Parallel NOR Flash Embedded Memory

M29FxxxFT/B
Features
Micron Parallel NOR Flash Embedded
Memory
Top/Bottom Boot Block 5V Supply
M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B
Features
• Supply voltage
– V_CC = 5V
• Access time: 55ns
• Program/erase controller
– Embedded byte/word program algorithms
• Erase suspend and resume modes
• Low power consumption
– Standby and automatic standby
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature
– Manufacturer code: 0x01h
• Top device codes
– M29F200FT: 0x2251
– M29F400FT: 0x2223
– M29F800FT: 0x22D6
– M29F160FT: 0x22D2
• Bottom device codes
– M29F200FB: 0x2257
– M29F400FB: 0x22AB
– M29F800FB: 0x2258
– M29F160FB: 0x22D8
• RoHS-compliant packages
– TSOP48
– SO44 (16Mb not available for this package)
• Automotive device grade 3
– Temperature: –40 to +125°C
• Automotive device grade 6
– Temperature: –40 to +85°C
• Automotive grade certified (AEC-Q100)
PDF: 09005aef845656da
m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN
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Products and specifications discussed herein are subject to change by Micron without notice.