M25PX80-VMP6TG Datasheet, PDF (1/56 Pages) Micron Technology – M25PX80 NOR Serial Flash Embedded Memory

M25PX80 Serial Flash Embedded Memory
Features
M25PX80 NOR Serial Flash Embedded
Memory
8Mb, Dual I/O, 4KB Subsector Erase, 3V Serial Flash Memory
with 75 MHz SPI Bus Interface
Features
• SPI bus compatible serial interface
• 75 MHz (maximum) clock frequency
• 2.3V to 3.6V single supply voltage
• Dual input/output instructions resulting in an
equivalent clock frequency of 150MHz
– Dual output fast read instruction
– Dual input fast program instruction
• 8Mb flash memory
– Uniform 4KB subsectors
– Uniform 64KB sectors
• Additional 64-byte user-lockable, one-time pro-
grammable (OTP) area
• Erase capability
– Subsector (4KB granularity)
– Sector (64KB granularity)
– Bulk erase (8Mb) in 8 s (TYP)
• Write protections
– Software write protection: applicable to every
64KB sector (volatile lock bit)
– Hardware write protection: protected area size
defined by non-volatile bits BP0, BP1, BP2
• Deep power down: 5µA (TYP)
• Electronic signature
– JEDEC standard 2-byte signature (7114h)
– Unique ID code (UID) with 16-byte read-only
space, available upon request
• More than 100,000 write cycles per sector
• More than 20 years data retention
• Packages (RoHS compliant)
– VFQFPN8 (MP) 6mm x 5mm
– SO8W (MW) 208mils
– SO8N (MN) 150mils
• Automotive grade parts available
PDF: 09005aef8456659e
m25px80.pdf - Rev. C 1/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.