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JS28F640P30TF75A Datasheet, PDF (1/90 Pages) Micron Technology – Numonyx® Axcell™ P30-65nm Flash Memory | |||
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Numonyx® Axcell⢠P30-65nm Flash Memory
128-Mbit, 64-Mbit Single Bit per Cell (SBC)
Datasheet
Product Features
 High Performance:
â 65ns initial access time for Easy BGA and
QUAD+
â 75ns initial access time for TSOP
â 25ns 8-word asynchronous-page read mode
â 52MHz with zero WAIT states, 17ns clock-to-
data output synchronous-burst read mode
â 4-, 8-, 16- and continuous-word options for
burst mode
â 1.8V Low Power buffered programming at
1.8MByte/s (Typ) using 256-word buffer
â Buffered Enhanced Factory Programming at
3.2MByte/s (typ) using 256-word buffer
 Architecture:
â Asymmetrically-blocked architecture
â Four 32-KByte parameter blocks: top or
bottom configuration
â 128-KByte array blocks
â Blank Check to verify an erased block
 Voltage and Power:
â VCC (core) voltage: 1.7V â 2.0V
â VCCQ (I/O) voltage: 1.7V â 3.6V
â Standby current: 30µA(Typ)/55µA(Max)
â Continuous synchronous read current: 23mA
(Typ)/28mA (Max) at 52MHz
 Enhanced Security:
â Absolute write protection: VPP = Vss
â Power-transition erase/program lockout
â Individual zero-latency block locking
â Individual block lock-down capability
â Password Access feature
â One-Time Programmable Register:
â 64 OTP bits, programmed with unique
information by Numonyx
â 2112 OTP bits, available for customer
programming
 Software:
â 20µs (Typ) program suspend
â 20µs (Typ) erase suspend
â Basic Command Set and Extended Function
Interface (EFI) Command Set compatible
â Common Flash Interface capable
 Density and Packaging:
â 56-Lead TSOP (128-Mbit, 64-Mbit)
â 64-Ball Easy BGA (128-Mbit, 64-Mbit)
â 88-Ball QUAD+ Package (128-Mbit)
â 16-bit wide data bus
 Quality and Reliability:
â JESD47E Compliant
â Operating temperature: â40°C to +85°C
â Minimum 100,000 erase cycles
â 65nm process technology
Datasheet
1
Apr 2010
Order Number: 208033-02
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