TC1303A_08 Datasheet, PDF (9/38 Pages) Microchip Technology – 500 mA Synchronous Buck Regulator, + 300 mA LDO with Power-Good Output

TC1303A/TC1303B/TC1303C/TC1304
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: V_IN1 =V_IN2 = SHDN1,2 = 3.6V, C_OUT1 = C_IN = 4.7 µF, C_OUT2 = 1 µF, L = 4.7 µH, V_OUT1 (ADJ) = 1.8V,
I_OUT1 = 100 mA, I_OUT2 = 0.1 mA T_A = +25°C. Boldface specifications apply over the T_A range of -40°C to +85°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Output Short Circuit Current
(Average)
I_OUTsc2
—
240
—
mA
R_LOAD2 ≤ 1Ω
Wake-Up Time (From SHDN2
t_WK
—
31
100
µs
I_OUT1 = I_OUT2 = 50 mA
mode), (V_OUT2)
Settling Time (From SHDN2
mode), (V_OUT2)
t_S
—
100
—
µs
I_OUT1 = I_OUT2 = 50 mA
Power-Good (PG)
Voltage Range PG
V_PG
1.0
—
5.5
V
T_A = 0°C to +70°C
1.2
5.5
T_A = -40°C to +85°C
V_IN ≤ 2.7 I_SINK = 100 µA
PG Threshold High
(V_OUT1 or V_OUT2)
V_{TH_H}
—
94
96
% of On Rising V_OUT1 or V_OUT2
V_OUTX V_OUTX = V_OUT1 or V_OUT2
PG Threshold Low
(V_OUT1 or V_OUT2)
V_{TH_L}
89
92
—
% of On Falling V_OUT1 or V_OUT2
V_OUTX V_OUTX = V_OUT1 or V_OUT2
PG Threshold Hysteresis
(V_OUT1 and V_OUT2)
V_{TH_HYS}
—
2
—
% of V_OUTX = V_OUT1 or V_OUT2
V_OUTX
PG Threshold Tempco
ΔV_TH/ΔT
—
30
—
ppm/°C
PG Delay
t_RPD
—
165
—
µs
V_OUT1 or V_OUT2 = (V_TH + 100 mV)
to (V_TH - 100 mV)
PG Active Time-out Period
t_RPU
140
262
560
ms
V_OUT1 or V_OUT2 = V_TH - 100 mV
to V_{TH +} 100 mV,
I_SINK = 1.2 mA
PG Output Voltage Low
PG_V_OL
—
—
0.2
V
V_OUT1orV_OUT2 = V_TH - 100 mV_,
I_PG= 1.2 mA V_IN2 > 2.7V
I_PG = 100 µA, 1.0V < V_IN2 < 2.7V
PG Output Voltage High
(TC1303B only)
PG_V_OH 0.9* V_OUT2 —
—
V
V_OUT1 or V_OUT2 = V_TH + 100 mV
V_OUT2 ≥ 1.8V, I_PG = - 500 µA
V_OUT2 < 1.8V,I_PG = - 300 µA
Note 1:
2:
3:
4:
The Minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ V_RX + V_DROPOUT, V_RX = V_R1 or V_R2.
V_RX is the regulator output voltage setting.
TCV_OUT2 = ((V_OUT2max – V_OUT2min) * 10⁶)/(V_OUT2 * D_T).
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. T_A, T_J, θ_JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
7: The integrated MOSFET switches have an integral diode from the L_X pin to V_IN, and from L_X to P_GND. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8: V_IN1 and V_IN2 are supplied by the same input source.
© 2008 Microchip Technology Inc.
DS21949C-page 9