English
Language : 

TC1223 Datasheet, PDF (8/14 Pages) Microchip Technology – 50mA and 100mA CMOS LDOs with Shutdown
TC1223/TC1224
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 3.3V LDO
Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 4.3V,
Temp = 25°C, Fall Time = 184µS
Measure Fall Time of 3.3V LDO
Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 4.3V,
Temp = 25°C, Fall Time = 52µS
VSHDN
VSHDN
VOUT
VOUT
Measure Rise Time of 5.0V LDO
Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 6V,
Temp = 25°C, Fall Time = 192µS
VSHDN
VOUT
Measure Fall Time of 5.0V LDO
Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 6V,
Temp = 25°C, Fall Time = 88µS
VSHDN
VOUT
Thermal Shutdown Response of 5.0V LDO
Conditions: VIN = 6V, CIN = 0µF, COUT = 1µF
VOUT
ILOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
DS21368B-page 8
© 2002 Microchip Technology Inc.