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TC1426 Datasheet, PDF (7/14 Pages) TelCom Semiconductor, Inc – 1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426/TC1427/TC1428
4.0 TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Rise Time vs. Supply Voltage
550
TA = +25°C
440
Fall Time vs. Supply Voltage
330
TA = +25°C
264
Delay Time vs. Supply Voltage
80
CL = 1000pF
TA = +25°C
70
330
10,000pF
198
10,000pF
60
220
132
4700pF
50
4700pF
tD1
110
2200pF
66
2200pF
40
tD2
0
0
30
5
7
9
11
13
15
5
7
9
11
13 15
5
7
9
11
13 15
VDD (V)
VDD (V)
VDD (V)
Rise and Fall Times vs. Temperature
40
CL = 1000pF
32 VDD = +15V tRISE
Delay Time vs. Temperature
60
CL = 1000pF
VDD = +15V
54
24
tFALL
tD2
48
16
42
tD1
8
36
Supply Current vs. Capacitive Load
30
CL = 1000pF
24
VDD = +15V
TA = +25°C
500kHz
18
200kHz
12
20kHz
6
0
25 45 65 85 105 125
TEMPERATURE (°C)
0
25 45 65 85 105 125
TEMPERATURE (°C)
0
100
520 940 1360 1780
CAPACITIVE LOAD (pF)
2200
Rise Time vs. Capacitive Load
1000
TA = +25°C
5 VDD
100
10 VDD
Fall Time vs. Capacitive Load
1000
TA = +25°C
5 VDD
100
10 VDD
Supply Current vs. Frequency
100
CL = 1000pF
TA = +25°C
80
VDD = 15V
VDD = 10V
60
40
15 VDD
10
100
1000
10,000
CAPACITIVE LOAD (pF)
15VDD
20
10
0
100
1000
10,000
10
CAPACITIVE LOAD (pF)
VDD = 5V
100
1000
FREQUENCY (kHz)
10,000
 2002 Microchip Technology Inc.
DS21393B-page 7