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TC1412 Datasheet, PDF (7/14 Pages) TelCom Semiconductor, Inc – 2A HIGH-SPEED MOSFET DRIVERS
TC1412/TC1412N
4.0 TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Quiescent Supply Current
vs. Supply Voltage
500
TA = 25°C
400
VIN = 3V
300
200
100
VIN = 0V
04
6
8
10
12
14
16
VDD (V)
Quiescent Supply Current
vs. Temperature
500
VIN = 3V
400
VSUPPLY = 16V
300
200
100 VIN = 0V
0
-40
-20
0
20
40
60
80
TEMPERATURE (°C)
Input Threshold vs. Supply Voltage
1.6
TA = 25°C
1.5
VIH
1.4
1.3
1.2
1.1
4
VIL
6
8
10
12
14
16
VDD (V)
Input Threshold vs. Temperature
1.6
VSUPPLY = 16V
1.5
VIH
1.4
1.3
1.2
VIL
1.1
-40
-20
0
20
40
60
80
TEMPERATURE (°C)
13
11
9
7
5
3
1
4
High-State Output Resistance
TA = 85°C
TA = 25°C
TA = -40°C
6
8
10
12
14
16
VDD (V)
Low-State Output Resistance
13
11
9
TA = 85°C
7
TA = 25°C
5
3
TA = -40°C
1
4
6
8
10
12
14
16
VDD (V)
 2002 Microchip Technology Inc.
DS21391B-page 7