MCP6N11 Datasheet, PDF (7/50 Pages) Microchip Technology – Rail-to-Rail Input and Output

MCP6N11
TABLE 1-3: DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T_A = 25°C, V_DD = 1.8V to 5.5V, V_SS = GND, EN/CAL = V_DD,
V_CM = V_DD/2, V_DM = 0V, V_REF = V_DD/2, V_L = V_DD/2, R_L = 10 kΩ to V_L, C_L = 60 pF and G_DM = G_MIN;
see Figure 1-6 and Figure 1-7.
Parameters
Sym
Min Typ Max Units G_MIN
Conditions
EN/CAL Low Specifications
EN/CAL Logic
Threshold, Low
V_IL
V_SS — 0.2 V_DD V all
EN/CAL Input Current,
I_ENL
— -0.1 —
nA
Low
EN/CAL = 0V
GND Current
I_SS
-7 -2.5 —
µA
Amplifier Output Leakage _{IO(LEAK) —}
10
—
nA
EN/CAL High Specifications
EN/CAL = 0V, V_DD = 5.5V
EN/CAL = 0V
EN/CAL Logic
Threshold, High
V_IH 0.8 V_DD
V_DD
V all
EN/CAL Input Current,
High
I_ENH
— -0.01 —
nA
EN/CAL = V_DD
EN/CAL Dynamic Specifications
EN/CAL Input Hysteresis V_HYST
—
0.2
—
EN/CAL Low to Amplifier t_OFF
—
3
10
Output High-Z Turn-off
Time
V all
µs
EN/CAL = 0.2V_DD to V_OUT = 0.1(V_DD/2),
V_DMG_DM = 1 V, V_L = 0V
EN/CAL High to
Amplifier Output
On Time
t_ON
12 20 28 ms
EN/CAL = 0.8V_DD to V_OUT = 0.9(V_DD/2),
V_DMG_DM = 1 V, V_L = 0V
EN/CAL Low to
t_ENLH
100
—
—
EN/CAL High low time
Amplifier On to
t_ENOL
EN/CAL Low Setup Time
— 100 —
POR Dynamic Specifications
V_DD ↓ to Output Off
t_PHL
— 10 —
V_DD ↑ to Output On
t_PLH
140 250 360
Note 1: For design guidance only; not tested.
µs
Minimum time before externally
releasing EN/CAL (Note 1)
µs
µs all V_L = 0V, V_DD = 1.8V to
V_PRL – 0.1V step,
90% of V_OUT change
ms
V_L = 0V, V_DD = 0V to V_PRH + 0.1V step,
90% of V_OUT change
TABLE 1-4: TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: V_DD = 1.8V to 5.5V, V_SS = GND.
Parameters
Sym Min Typ Max Units
Conditions
Temperature Ranges
Specified Temperature Range
T_A
-40
— +125 °C
Operating Temperature Range
T_A
-40
— +125 °C (Note 1)
Storage Temperature Range
T_A
-65
— +150 °C
Thermal Package Resistances
Thermal Resistance, 8L-SOIC
θ_JA
—
150
— °C/W
Thermal Resistance, 8L-TDFN (2×3) θ_JA
—
53
— °C/W
Note 1: Operation must not cause T_J to exceed the Absolute Maximum Junction Temperature specification (+150°C).
© 2011 Microchip Technology Inc.
DS25073A-page 7