MCP1754 Datasheet, PDF (6/42 Pages) Microchip Technology – 150 mA, 16V, High Performance LDO

MCP1754/MCP1754S
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V_IN = V_R + 1V, Note 1, I_LOAD = 1 mA, C_OUT =
1 µF (X7R), C_IN = 1 µF (X7R), T_A = 25°C, t_r(VIN) = 0.5V/µs, SHDN = V_IN, PWRGD = 10K to V_OUT.
Boldface type applies for junction temperatures, T_J (Note 7) of -40°C to +125°C.
Parameters
Sym
Min Typ Max
Units
Conditions
Output Voltage Regulation
V_OUT
V_R- V_R±0. V_R+2.0
2.0% 2%
%
V
Note 2
V_OUT Temperature
Coefficient
TCV_OUT
—
22
ppm/°C Note 3
Line Regulation
Load Regulation
Dropout Voltage (Note 5)
Dropout Current
Undervoltage Lockout
ΔV_OUT/
(V_OUTXΔV_IN)
ΔV_OUT/V_OUT
V_DROPOUT
I_DO
-0.05 ±0.01
-1.1 -0.4
— 300
—
50
+0.05
0
500
85
%/V V_R + 1V ≤ V_IN ≤ 16V
%
I_L = 1.0 mA to 150 mA, Note 4
mV I_L = 150 mA
µA
V_IN = 0.95V_R, I_OUT = 0 mA
Undervoltage Lockout
Undervoltage Lockout
Hysterisis
UVLO
— 2.95
—
UVLO_HYS
— 285
—
V
Rising V_IN
mV Falling V_IN
Shutdown Input
Logic High Input
V_SHDN-HIGH
2.4
— V_IN(MAX)
V
Logic Low Input
V_SHDN-LOW
0.0
—
0.8
V
Shutdown Input Leakage
Current
SHDN_ILK
— 0.100 0.500
— 0.500 2.0
µA SHDN = GND
SHDN = 16V
Power Good Output
PWRGD Input Voltage
V_{PWRGD_VIN}
1.7
—
V_IN
Operating Range
V
I_SINK = 1 mA
PWRGD Threshold Volt- V_{PWRGD_TH}
90
92
age (Referenced to V_OUT)
PWRGD Threshold
Hysteresis
V_{PWRGD_HYS}
—
2.0
94
%V_OUT Falling Edge of V_OUT
—
%V_OUT Rising Edge of V_OUT
PWRGD Output Voltage
V_{PWRGD_L}
—
0.2
0.6
Low
PWRGD Output Sink
Current
I_{PWRGD_L}
5.0
—
—
V
I_{PWRGD_SINK} = 5.0 mA,
V_OUT = 0V
mA V_PWRGD ≤ 0.4V
PWRGD Leakage Current I_{PWRGD_LK}
—
40
700
nA
V_PWRGD Pullup = 10 KΩ to V_IN,
V_IN = 16V
Note 1:
2:
3:
4:
The minimum V_IN must meet two conditions: V_IN ≥ 3.6V and V_IN ≥ V_R + V_DROPOUT(MAX).
V_R is the nominal regulator output voltage when the input voltage V_IN = V_Rated + V_DROPOUT(MAX) or Vi_IN = 3.6V (which-
ever is greater); I_OUT = 1 mA.
TCV_OUT = (V_OUT-HIGH - V_OUT-LOW) *10⁶ / (V_R * ΔTemperature), V_OUT-HIGH = highest voltage measured over the
temperature range. V_OUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV_OUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal V_R
measured value. The nominal VR measured value is obtained with
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
DS22276A-page 6
© 2011 Microchip Technology Inc.