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RE46C162 Datasheet, PDF (5/22 Pages) Microchip Technology – CMOS Ionization Smoke Detector ASIC with Interconnect, Timer Mode and Alarm Memory
RE46C162/163
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VDD....................................................................................15V
Input Voltage Range Except FEED, I/O ........... VIN=-.3V to VDD +.3V
FEED Input Voltage Range .................... VINFD = -10 to +22V
I/O Input Voltage Range................................VIO1 = -.3 to 15V
Reverse Battery Time ...............................................TRB = 5S
Input Current except FEED ................................... IIN = 10 mA
Operating Temperature ............................... TA = -10 to +60°C
Storage Temperature ............................TSTG = -55 to +125°C
Maximum Junction Temperature ......................... TJ = +150°C
† Notice: Stresses above those listed under “Maximum rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
DC ELECTRICAL CHARACTERISTICS
DC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = +25°C, VDD = 9V,
OSCAP = .1 µF, RBIAS = 8.2 M, VSS = 0V
Parameter
Symbol
Test
Pin
Min
Typ
Max
Units
Conditions
Supply Voltage
Supply Current
VDD
6
6
— 12
V
IDD1
6
—
5
6.5
µA
IDD2
6
——
9
µA
Input Voltage High
Input Voltage Low
Input Leakage Low
VIH1
3,8 6.2 4.5 —
V
VIH2
2
3
—
—
V
VIH3
1
4.5 —
—
V
VIL1
3,8 — 4.5 2.7
V
VIL2
2
——
1
V
VIL3
1
— — 2.5
V
ILDET1
15
—
— -0.75 pA
ILDET2
15
—
— -1.50 pA
Input Leakage High
ILFD
8
— — -50
µA
ILTONE
3
— — -100 nA
IHDET1
15
—
— 0.75
pA
IHDET2
15
—
— 1.50
pA
IHFD
8
— — 50
µA
IIOL2
2
—
— 150
µA
IHTONE
3
— — 100
nA
Output Off Leakage High
IIOHZ
4,5
—
—
1
µA
Input Pull Down Current
IPD1
1
20 50 80
µA
Output High Voltage
VOH1 10,11 6.3
—
—
V
Note 1: Sample test only.
2: Not 100% production tested.
3: Production test at room with temperature guard banded limits.
Operating
RBIAS = 8.2 MW, OSCAP = .1 µF
RBIAS = 8.2 MW, OSCAP = .1 µF;
VDD = 12V
Note 2
No local alarm, I/O as an input
Note 2
No local alarm, I/O as an input
VDD = 9V, DETECT = VSS,
0-40% RH
VDD = 9V, DETECT = VSS, 85%
RH Note 1
FEED = -10V
TONE = VSS
VDD = 9V, DETECT = VDD,
0-40% RH
VDD = 9V, DETECT = VDD,
85% RH Note 1
FEED = 22V
No alarm, VIO = 15V
TONE = VDD
Outputs off
TSTART = 9V
IOH = -16 mA, VDD = 7.2V
 2010 Microchip Technology Inc.
DS22245A-page 5