TC1301A_08 Datasheet, PDF (4/28 Pages) Microchip Technology – Dual LDO with Microcontroller RESET Function

TC1301A/B
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V_IN = V_R +1V, I_OUT1 = I_OUT2 = 100 µA, C_IN = 4.7 µF, C_OUT1 = C_OUT2 = 1 µF,
C_BYPASS = 10 nF, SHDN > V_IH, T_A = +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max Units
Conditions
Shutdown Supply Current
TC1301A
I_{IN_SHDNA}
—
58
90
µA SHDN2 = GND, V_DET = OPEN
Shutdown Supply Current
TC1301B
I_{IN_SHDNB}
—
0.1
1
µA SHDN1 = SHDN2 = GND
Power Supply Rejection Ratio
PSRR
Output Noise
eN
Output Short-Circuit Current (Average)
—
58
—
dB
f ≤ 100 Hz, I_OUT1 = I_OUT2 = 50 mA,
C_IN = 0 µF
—
830
—
nV/(Hz)^½
f ≤ 1 kHz, I_OUT1 = I_OUT2 = 50 mA,
C_IN = 0 µF
V_OUT1
V_OUT2
SHDN Input High Threshold
SHDN Input Low Threshold
Wake-Up Time (From SHDN
mode), (V_OUT2)
Settling Time (From SHDN mode),
(V_OUT2)
Thermal Shutdown Die
Temperature
I_OUTsc
I_OUTsc
V_IH
V_IL
t_WK
t_S
T_SD
—
200
—
mA R_LOAD1 ≤ 1Ω
—
140
—
mA R_LOAD2 ≤ 1Ω
45
—
—
%V_IN V_IN = 2.7V to 6.0V
—
—
15
%V_IN V_IN = 2.7V to 6.0V
—
5.3
20
µs
V_IN = 5V, I_OUT1 = I_OUT2 = 30 mA,
See Figure 5-1
—
50
—
µs
V_IN = 5V, I_OUT1 = I_OUT2 = 50 mA,
See Figure 5-2
—
150
—
°C
V_IN = 5V, I_OUT1 = I_OUT2 = 100 µA
Thermal Shutdown Hysteresis
Voltage Range
T_HYS
V_DET
—
10
—
1.0
1.2
—
6.0
6.0
°C V_IN = 5V
V
T_A = 0°C to +70°C
T_A = -40°C to +125°C
RESET Threshold
RESET Threshold Tempco
V_DET RESET Delay
V_TH
-1.4
-2.8
ΔV_TH/ΔT
—
t_RPD
—
—
+1.4
%
—
+2.8
% T_A = -40°C to +125°C
30
— ppm/°C
180
—
µs
V_DET = V_TH to (V_TH – 100 mV),
See Figure 5-3
RESET Active Time-out Period
RESET Output Voltage Low
t_RPU
V_OL
140
300
560
—
—
0.2
ms
V_DET = V_TH - 100 mV to V_TH + 100 mV,
I_SINK = 1.2 mA, See Figure 5-3.
V_DET = V_THmin, I_SINK = 1.2 mA,
V
I_SINK = 100 µA for V_DET < 1.8V,
See Figure 5-3
RESET Output Voltage High
V_OH
0.9
V_DET
—
—
V
V_DET > V_THmax, I_SOURCE = 500 µA,
See Figure 5-3
Note 1:
2:
3:
4:
The minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ V_R + V_DROPOUT.
V_R is defined as the higher of the two regulator nominal output voltages (V_OUT1 or V_OUT2).
TCV_OUT = ((V_OUTmax - V_OUTmin) * 10⁶)/(V_OUT * ΔT).
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for
t = 10 ms.
6: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its value
measured at a 1V differential.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
DS21798C-page 4
© 2008 Microchip Technology Inc.