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| TC1072_07 Datasheet, PDF (4/22 Pages) Microchip Technology – 50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass | |||
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TC1072/TC1073
2.0 TYPICAL CHARACTERISTICS CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
Dropout Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 10mA
CIN = 1μF
COUT = 1μF
-40 -20
0
20
50
70 125
TEMPERATURE (°C)
0.100
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.000
Dropout Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 50mA
CIN = 1μF
COUT = 1μF
-40 -20
0
20 50 70 125
TEMPERATURE (°C)
0.200
0.180
Dropout Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 100mA
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
CIN = 1μF
COUT = 1μF
0.000
-40 -20
0
20
50
70 125
TEMPERATURE (°C)
0.300
0.250
Dropout Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 150mA
0.200
0.150
0.100
0.050
CIN = 1μF
COUT = 1μF
0.000
-40 -20
0
20 50 70 125
TEMPERATURE (°C)
Ground Current vs. VIN (VOUT = 3.3V)
90
80
ILOAD = 10mA
70
60
50
40
30
20
10
CIN = 1μF
COUT = 1μF
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
Ground Current vs. VIN (VOUT = 3.3V)
90
80
ILOAD = 100mA
70
60
50
40
30
20
10
CIN = 1μF
COUT = 1μF
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
DS21354D-page 4
© 2007 Microchip Technology Inc.
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