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MCP621_14 Datasheet, PDF (4/62 Pages) Microchip Technology – Input Range incl. Negative Rail
MCP621/1S/2/3/4/5/9
TABLE 1-1: DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT  VDD/2, VL = VDD/2, RL = 2 k to VL and CAL/CS = VSS (refer to Figure 1-2).
Parameters
Sym.
Min.
Typ.
Max. Units
Conditions
Output
Maximum Output Voltage Swing VOL, VOH VSS + 20
—
VDD  20 mV VDD = 2.5V, G = +2,
0.5V Input Overdrive
VOL, VOH VSS + 40
—
VDD  40 mV VDD = 5.5V, G = +2,
0.5V Input Overdrive
Output Short Circuit Current
Calibration Input
ISC
±40
±85
±130
mA VDD = 2.5V (Note 4)
ISC
±35
±70
±110
mA VDD = 5.5V (Note 4)
Calibration Input Voltage Range
Internal Calibration Voltage
Input Impedance
Power Supply
VCALRNG
VCAL
ZCAL
VSS + 0.1
—
VDD – 1.4 mV VCAL pin externally driven
0.323VDD 0.333VDD 0.343VDD
VCAL pin open
—
100 || 5
— k||pF
Supply Voltage
Quiescent Current per Amplifier
POR Input Threshold, Low
VDD
IQ
VPRL
2.5
1.2
1.15
—
2.5
1.40
5.5
V
3.6
mA IO = 0
—
V
POR Input Threshold, High
VPRH
—
1.40
1.65
V
Note 1:
2:
3:
4:
Describes the offset (under the specified conditions) right after power-up, or just after the CAL/CS pin is
toggled. Thus, 1/f noise effects (an apparent wander in VOS; see Figure 2-35) are not included.
Increment between adjacent VOS trim points; Figure 2-3 shows how this affects the VOS repeatability.
See Figure 2-6 and Figure 2-7 for temperature effects.
The ISC specifications are for design guidance only; they are not tested.
TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND,
VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 2 k to VL, CL = 50 pF and CAL/CS = VSS (refer to Figure 1-2).
Parameters
Sym. Min. Typ. Max. Units
Conditions
AC Response
Gain Bandwidth Product
Phase Margin
Open-Loop Output Impedance
AC Distortion
Total Harmonic Distortion plus
Noise
Step Response
Rise Time, 10% to 90%
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
GBWP —
20
—
PM
—
60
—
ROUT
—
15
—
THD+N — 0.0018 —
tr
—
13
—
SR
—
10
—
MHz
°

G = +1
% G = +1, VOUT = 2VP-P, f = 1 kHz,
VDD = 5.5V, BW = 80 kHz
ns G = +1, VOUT = 100 mVP-P
V/µs G = +1
Eni
—
20
—
µVP-P f = 0.1 Hz to 10 Hz
eni
—
13
— nV/Hz f = 1 MHz
ini
4
— fA/Hz f = 1 kHz
DS20002188D-page 4
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