TC4431 Datasheet, PDF (3/14 Pages) TelCom Semiconductor, Inc – 1.5A HIGH-SPEED 30V MOSFET DRIVERS

TC4431/TC4432
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage....................................................... 36V
Input Voltage (Note 1)....................V_DD + 0.3V to GND
Package Power Dissipation (T_A ≤ 70°C)
PDIP ........................................................ 730mW
CERDIP ................................................... 800mW
SOIC........................................................ 470mW
Package Thermal Resistance
CERDIP R_θJ-A........................................ 150°C/W
CERDIP R_θJ-C ......................................... 50°C/W
PDIP R_θJ-A............................................. 125°C/W
PDIP R_θJ-C............................................... 42°C/W
SOIC R_θJ-A ............................................ 250°C/W
SOIC R_θJ-C .............................................. 75°C/W
Operating Temperature Range
C Version .........................................0°C to +70°C
E Version ..................................... -40°C to +85°C
Storage Temperature Range ............. -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC4431/TC4432 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: T_A = +25°C, with 4.5V ≤ V_DD ≤ 30V, unless otherwise noted..
Symbol
Parameter
Min
Typ
Max Units
Test Conditions
Input
V_IH
V_IL
I_IN
Output
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current (Note 1)
2.4
—
—
V
—
—
0.8
V
-1
—
1
µA 0V ≤ V_IN ≤ 12V
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance
I_PK
Peak Output Current
I_REV
Latch-Up Protection
Withstand Reverse Current
V_DD – 1.0
—
—
—
—
0.3
V_DD – 0.8
—
7
3.0
1.5
—
—
0.025
10
—
—
—
V I_OUT = 100mA
V
Ω I_OUT = 10mA, V_DD = 30V
A Source: V_DD = 30V
Sink: V_DD = 30V
A Duty cycle ≤ 2%, t ≤ 300µsec
Switching Time (Note 2)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
—
25
40 nsec Figure 3-1
—
33
50 nsec Figure 3-1
—
62
80 nsec Figure 3-1
—
78
90 nsec Figure 3-1
I_S
V_S
V_DO
Note
Power Supply Current
Start-up Threshold
—
2.5
4
mA V_IN = 3V
—
0.3
0.4
V_IN = 0V
—
8.4
10
V
Drop-out Threshold
7
7.7
—
V Note 3
1: For inputs >12V, add a 1kΩ resistor in series with the input. See “Typical Characteristics” graph for input current.
2: Switching times are ensured by design.
3: For operation below 7V, pin 3 (LOCK DIS) should be tied to ground to disable the lockout and start-up circuit, otherwise, pin 3 must be left
floating.
 2002 Microchip Technology Inc.
DS21424B-page 3