TC4426_13 Datasheet, PDF(3/20 Page) Microchip Technology – 1.5A Dual High-Speed Power MOSFET Drivers

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TC4426_13 Datasheet, PDF (3/20 Pages) Microchip Technology – 1.5A Dual High-Speed Power MOSFET Drivers

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TC4426/TC4427/TC4428

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings â

Supply Voltage ..................................................... +22V

Input Voltage, IN A or IN B

..................................... (VDD + 0.3V) to (GND â 5V)

Package Power Dissipation (TA ï£ï 70Â°C)

DFN .............................................................. Note 3

MSOP .......................................................... 340 mW

PDIP ............................................................ 730 mW

SOIC............................................................ 470 mW

Storage Temperature Range.............. -65Â°C to +150Â°C

Maximum Junction Temperature ...................... +150Â°C

â Stresses above those listed under âAbsolute Maximum

Ratingsâ may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

PIN FUNCTION TABLE

Name

IN A

GND

IN B

OUT B

VDD

OUT A

Function

No Connection

Input A

Ground

Input B

Output B

Supply Input

Output A

No Connection

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, TA = +25ÂºC with 4.5V ï£ VDD ï£ 18V.

Parameters

Sym

Min

Typ Max Units

Conditions

Input

Logic â1â, High Input Voltage

VIH

2.4

V Note 2

Logic â0â, Low Input Voltage

VIL

â 0.8 V

Input Current

IIN

-1.0

â +1.0 ïA 0Vï ï£ï VINï ï£ï VDD

Output

High Output Voltage

Low Output Voltage

Output Resistance

Peak Output Current

Latch-Up Protection

Withstand Reverse Current

Switching Time (Note 1)

VOH

VOL

IPK

IREV

VDD â 0.025

1.5

> 0.5

0.025

V DC Test

ï IOUT = 10 mA, VDD = 18V

A VDD = 18V

A Duty cycleï ï ï£ï 2%, t ï ï£ï 300 ïs

VDD = 18V

Rise Time

Fall Time

Delay Time

Power Supply

19 30 ns Figure 4-1

tD1

20 30 ns Figure 4-1

tD2

40 50 ns Figure 4-1

Power Supply Current

Note 1: Switching times ensured by design.

4.5 mA VIN = 3V (Both inputs)

â 0.4

VIN = 0V (Both inputs)

2: For V temperature range devices, the VIH (Min) limit is 2.0V.

3: Package power dissipation is dependent on the copper pad area on the PCB.

ï£ 2002-2012 Microchip Technology Inc.

DS21422E-page 3

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