TC4426A Datasheet, PDF (3/16 Pages) TelCom Semiconductor, Inc – 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC4426A/TC4427A/TC4428A
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage..................................................... +22V
Input Voltage, IN A or IN B
..................................(V_DD + 0.3V) to (GND – 5V)
Package Power Dissipation (T_A ≤ 70°C)
PDIP ........................................................ 730mW
CERDIP ................................................... 800mW
SOIC........................................................ 470mW
Package Thermal Resistance
CERDIP R_θJ-A........................................ 150°C/W
CERDIP R_θJ-C ......................................... 50°C/W
PDIP R_θJ-A............................................. 125°C/W
PDIP R_θJ-C............................................... 42°C/W
SOIC R_θJ-A ............................................ 155°C/W
SOIC R_θJ-C .............................................. 45°C/W
Operating Temperature Range
C Version .........................................0°C to +70°C
E Version ..................................... -40°C to +85°C
M Version................................... -55°C to +125°C
Storage Temperature Range ............. -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC4426A/TC4427A/TC4428A ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Over operating temperature range with 4.5V ≤ V_DD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
V_IH
Logic 1, High Input Voltage
V_IL
Logic 0, Low Input Voltage
I_IN
Input Current
2.4
—
—
—
-1
—
-10
—
Output
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance
V_DD – 0.025
—
—
—
—
7
—
7
—
8
I_PK
Peak Output Current
I_REV
Latch-Up Protection
Withstand Reverse Current
—
1.5
0.5
—
Note 1: Switching times ensured by design.
—
0.8
1
10
—
0.025
9
10
11
—
—
V
V
µA 0V ≤ V_IN ≤ V_DD
V DC Test
V DC Test
Ω I_OUT = 10mA, V_DD = 18V, T_A = +25°C
0°C ≤ T_A ≤ +70°C
-40°C ≤ T_A ≤ +85°C
A V_DD = 18V
A Duty cycle ≤ 2%, t ≤ 300µsec
V_DD = 18V
 2002 Microchip Technology Inc.
DS21423B-page 3