TC4423M Datasheet, PDF (3/18 Pages) Microchip Technology – 3A Dual High-Speed Power MOSFET Drivers

TC4423M/TC4424M/TC4425M
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B .......... (V_DD + 0.3V) to (GND – 5V)
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T_A = +25°C, with 4.5V ≤ V_DD ≤ 18V.
Parameters
Sym
Min
Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
V_IH
Logic ‘0’, Low Input Voltage
V_IL
Input Current
I_IN
Output
High Output Voltage
V_OH
Low Output Voltage
V_OL
Output Resistance, High
R_OH
Output Resistance, Low
R_OL
Peak Output Current
I_PK
Latch-Up Protection Withstand I_REV
Reverse Current
Switching Time (Note 1)
Rise Time
t_R
2.4
—
-1
V_DD –
0.025
—
—
—
—
—
—
Fall Time
t_F
—
Delay Time
t_D1
—
Delay Time
t_D2
—
Power Supply
Power Supply Current
I_S
—
—
Note 1: Switching times ensured by design.
—
—
V
—
0.8
V
—
1
µA 0V ≤ V_IN ≤ V_DD
—
—
V
—
2.8
3.5
3
>1.5
0.025
5
5
—
—
V
Ω I_OUT = 10 mA, V_DD = 18V
Ω I_OUT = 10 mA, V_DD = 18V
A
A Duty cycle ≤ 2%, t ≤ 300 µsec.
23
35
ns Figure 4-1, Figure 4-2,
C_L = 1800 pF
25
35
ns Figure 4-1, Figure 4-2,
C_L = 1800 pF
33
75
ns Figure 4-1, Figure 4-2,
C_L = 1800 pF
38
75
ns Figure 4-1, Figure 4-2,
C_L = 1800 pF
1.5
0.15
2.5
0.25
mA V_IN = 3V (Both inputs)
V_IN = 0V (Both inputs)
© 2005 Microchip Technology Inc.
DS21937A-page 3