TC4422ESM Datasheet, PDF (3/18 Pages) Microchip Technology – 9A High-Speed MOSFET Drivers

1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage .................... (V_DD + 0.3V) to (GND – 5V)
Input Current (V_IN > V_DD)................................... 50 mA
Package Power Dissipation (T_A ≤ 70°C)
5-Pin TO-220 .................................................... 1.6W
DFN .............................................................. Note 2
PDIP ............................................................ 730 mW
SOIC............................................................ 750 mW
Package Power Dissipation (T_A ≤ 25°C)
5-Pin TO-220 (With Heatsink) ........................ 12.5W
Thermal Impedances (To Case)
5-Pin TO-220 R_θJ-C ...................................... 10°C/W
TC4421/TC4422
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T_A = +25°C with 4.5V ≤ V_DD ≤ 18V.
Parameters
Sym
Min
Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
V_IH
Logic ‘0’, Low Input Voltage
V_IL
Input Current
I_IN
Output
2.4
1.8 —
V
—
1.3 0.8 V
–10
—
+10 µA 0V ≤ V_IN ≤ V_DD
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
V_OH V_DD – 0.025 —
V_OL
—
—
R_OH
—
1.4
R_OL
—
0.9
I_PK
—
9.0
I_DC
2
—
—
0.025
—
1.7
—
—
V DC TEST
V DC TEST
Ω I_OUT = 10 mA, V_DD = 18V
Ω I_OUT = 10 mA, V_DD = 18V
A V_DD = 18V
A 10V ≤ V_DD ≤ 18V, T_A = +25°C
(TC4421/TC4422 CAT only) (Note 3)
Latch-Up Protection
I_REV
Withstand Reverse Current
—
>1.5 —
A Duty cycle ≤ 2%, t ≤ 300 µsec
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
t_R
—
60
75
ns Figure 4-1, C_L = 10,000 pF
t_F
—
60
75
ns Figure 4-1, C_L = 10,000 pF
t_D1
—
30 60 ns Figure 4-1
t_D2
—
33 60 ns Figure 4-1
Power Supply Current
I_S
—
—
Operating Input Voltage
V_DD
4.5
Note 1: Switching times ensured by design.
0.2 1.5 mA V_IN = 3V
55 150 µA V_IN = 0V
—
18
V
2: Package power dissipation is dependent on the copper pad area on the PCB.
3: Tested during characterization, not production tested.
 2004 Microchip Technology Inc.
DS21420D-page 3