TC4421M_13 Datasheet, PDF (3/18 Pages) Microchip Technology – 9A High-Speed MOSFET Drivers

TC4421M/TC4422M
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage .................... (V_DD + 0.3V) to (GND – 5V)
Input Current (V_IN > V_DD)................................... 50 mA
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T_A = +25°C with 4.5V  V_DD  18V.
Parameters
Sym
Min
Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
V_IH
2.4
Logic ‘0’, Low Input Voltage
V_IL
—
Input Current
I_IN
-10
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
V_OH
V_OL
R_OH
R_OL
I_PK
I_REV
V_DD – 0.025
—
—
—
—
—
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
t_R
—
t_F
—
t_D1
—
t_D2
—
Power Supply Current
I_S
—
—
Operating Input Voltage
V_DD
4.5
Note 1: Switching times ensured by design.
1.8
1.3
—
—
—
1.4
0.9
9.0
>1.5
60
60
30
33
0.2
55
—
—
0.8
+10
—
0.025
—
1.7
—
—
75
75
60
60
1.5
150
18
V
V
µA 0VV_INV_DD
V DC TEST
V DC TEST
 I_OUT = 10 mA, V_DD = 18V
 I_OUT = 10 mA, V_DD = 18V
A V_DD = 18V
A Duty cycle2%, t 300 µsec
ns Figure 4-1, C_L = 10,000 pF
ns Figure 4-1, C_L = 10,000 pF
ns Figure 4-1
ns Figure 4-1
mA V_IN = 3V
µA V_IN = 0V
V
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DS21934B-page 3