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TC4420 Datasheet, PDF (3/22 Pages) TelCom Semiconductor, Inc – 6A HIGH-SPEED MOSFET DRIVERS | |||
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1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratingsâ
Supply Voltage ..................................................... +20V
Input Voltage .................................. â 5V to VDD + 0.3V
Input Current (VIN > VDD)................................... 50 mA
Power Dissipation (TA ï£ï 70°C)
5-Pin TO-220 .................................................... 1.6W
CERDIP ....................................................... 800 mW
DFN ............................................ ...................Note 2
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Package Power Dissipation (TA ï£ï 25°C)
5-Pin TO-220 (With Heatsink) ........................ 12.5W
Thermal Impedances (To Case)
5-Pin TO-220 Rï±J-C ...................................... 10°C/W
TC4420/TC4429
â Stresses above those listed under âAbsolute Maximum
Ratingsâ may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ï£ VDD ï£ 18V.
Parameters
Sym
Min
Typ Max Units
Conditions
Input
Logic â1â, High Input
Voltage
VIH
2.4
1.8
â
V
Logic â0â, Low Input Voltage VIL
Input Voltage Range
VIN
Input Current
IIN
Output
â
1.3
0.8
V
â5
â VDD+0.3 V
â10
â
+10
µA 0Vï ï£ï VINï ï£ï VDD
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
VOH
VOL
ROH
ROL
IPK
IREV
VDD â 0.025
â
â
â
â
â
â
â
2.1
1.5
6.0
> 1.5
â
0.025
2.8
2.5
â
â
V DC TEST
V DC TEST
ï IOUT = 10 mA, VDD = 18V
ï IOUT = 10 mA, VDD = 18V
A VDD = 18V
A Duty cycleï ï ï£ï 2%, t ï ï£ï 300 µsec
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
tR
â
25
35
ns Figure 4-1, CL = 2,500 pF
tF
â
25
35
ns Figure 4-1, CL = 2,500 pF
tD1
â
55
75
ns Figure 4-1
tD2
â
55
75
ns Figure 4-1
Power Supply Current
IS
â
â
Operating Input Voltage
VDD
4.5
Note 1: Switching times ensured by design.
0.45
1.5
mA VIN = 3V
55
150
µA VIN = 0V
â
18
V
2: Package power dissipation is dependent on the copper pad area on the PCB.
ï£ 2002-2012 Microchip Technology Inc.
DS21419D-page 3
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