TC4404_06 Datasheet, PDF (3/16 Pages) Microchip Technology – 1.5A Dual Open-Drain MOSFET Drivers

TC4404/TC4405
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage ..................................................... +22V
Power Dissipation (T_A ≤ 70°C)
PDIP........................................................ 730 mW
CERDIP .................................................. 800 mW
SOIC ....................................................... 470 mW
Package Thermal Resistance
PDIP R_θJ-A ............................................. 125°C/W
PDIP R_θJ-C ............................................... 45°C/W
CERDIP R_θJ-A ........................................ 150°C/W
CERDIP R_θJ-C .......................................... 55°C/W
SOIC R_θJ-A ............................................. 155°C/W
SOIC R_θJ-C............................................... 45°C/W
Operating Temperature Range
C Version ........................................ 0°C to +70°C
E Version...................................... -40°C to +85°C
M Version ................................... -55°C to +125°C
Storage Temperature Range.............. -65°C to +150°C
*Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC4404/TC4405 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: T_A = +25°C, with 4.5V ≤ V_DD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max Units
Test Conditions
Input
V_IH
Logic 1, High Input Voltage
2.4
V_IL
Logic 0, Low Input Voltage
—
I_IN
Input Current
-1
Output
V_OH High Output Voltage
V_DD – 0.025
V_OL
Low Output Voltage
—
R_O
Output Resistance
—
I_PK
Peak Output Current (Any Drain)
—
I_DC
Continuous Output Current (Any Drain)
—
I_R
Latch-Up Protection (Any Drain)
—
Withstand Reverse Current
Switching Time (Note 1)
t_R
Rise Time
—
t_F
Fall Time
—
t_D1
Delay Time
—
t_D2
Delay Time
—
Power Supply
I_S
Power Supply Current
—
—
Note 1: Switching times ensured by design.
—
—
—
—
—
7
1.5
—
>500
25
25
15
32
—
—
—
0.8
1
—
0.025
10
—
100
—
30
30
30
50
4.5
0.4
V
V
μA 0V ≤ V_IN ≤ V_DD
V
V
Ω I_OUT = 10 mA, V_DD = 18V; Any Drain
A Duty cycle ≤ 2%, t ≤ 300 μsec
mA
mA Duty cycle ≤ 2%, t ≤ 300 μsec
nsec
nsec
nsec
nsec
Figure 3-1, C_L = 1000 pF
Figure 3-1, C_L = 1000 pF
Figure 3-1, C_L = 1000 pF
Figure 3-1, C_L = 1000 pF
mA V_IN = 3V (Both Inputs)
V_IN = 0V (Both Inputs)
© 2006 Microchip Technology Inc.
DS21418C-page 3