TC4404 Datasheet, PDF (3/16 Pages) TelCom Semiconductor, Inc – 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

TC4404/TC4405
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage..................................................... +22V
Power Dissipation (T_A ≤ 70°C)
PDIP ........................................................ 730mW
CERDIP ................................................... 800mW
SOIC........................................................ 470mW
Package Thermal Resistance
PDIP R_θJ-A............................................. 125°C/W
PDIP R_θJ-C............................................... 45°C/W
CERDIP R_θJ-A.........................................150°C/W
CERDIP R_θJ-C ......................................... 55°C/W
SOIC R_θJ-A ............................................ 155°C/W
SOIC R_θJ-C .............................................. 45°C/W
Operating Temperature Range
C Version .........................................0°C to +70°C
E Version ..................................... -40°C to +85°C
M Version................................... -55°C to +125°C
Storage Temperature Range ............. -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC4404/TC4405 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: T_A = +25°C, with 4.5V ≤ V_DD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max Units
Test Conditions
Input
V_IH
Logic 1, High Input Voltage
2.4
V_IL
Logic 0, Low Input Voltage
—
I_IN
Input Current
-1
Output
V_OH High Output Voltage
V_DD – 0.025
V_OL
Low Output Voltage
—
R_O
Output Resistance
—
I_PK
Peak Output Current (Any Drain)
—
I_DC
Continuous Output Current (Any Drain)
—
I_R
Latch-Up Protection (Any Drain)
—
Withstand Reverse Current
Switching Time (Note 1)
t_R
Rise Time
—
t_F
Fall Time
—
t_D1
Delay Time
—
t_D2
Delay Time
—
Power Supply
I_S
Power Supply Current
—
—
Note 1: Switching times ensured by design.
—
—
—
—
—
7
1.5
—
>500
25
25
15
32
—
—
—
0.8
1
—
0.025
10
—
100
—
30
30
30
50
4.5
0.4
V
V
µA 0V ≤ V_IN ≤ V_DD
V
V
Ω I_OUT = 10mA, V_DD = 18V; Any Drain
A Duty cycle ≤ 2%, t ≤ 300µsec
mA
mA Duty cycle ≤ 2%, t ≤ 300µsec
nsec
nsec
nsec
nsec
Figure 3-1, C_L = 1000pF
Figure 3-1, C_L = 1000pF
Figure 3-1, C_L = 1000pF
Figure 3-1, C_L = 1000pF
mA V_IN = 3V (Both Inputs)
V_IN = 0V (Both Inputs)
 2002 Microchip Technology Inc.
DS21418B-page 3