TC429_03 Datasheet, PDF (3/18 Pages) Microchip Technology – 6A Single High-Speed, CMOS Power MOSFET Driver

TC429
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ..................................................... +20V
Input Voltage, Any Terminal
................................... V_DD + 0.3V to GND – 0.3V
Power Dissipation (T_A ≤ 70°C)
PDIP ............................................................ 730 mW
CERDIP ....................................................... 800 mW
SOIC............................................................ 470 mW
Storage Temperature Range.............. -65°C to +150°C
Maximum Junction Temperature, T_J ............... +150°C
† Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
PIN FUNCTION TABLE
Symbol
V_DD
INPUT
NC
GND
GND
OUTPUT
OUTPUT
V_DD
Description
Supply input, 7V to 18V
Control input. TTL/CMOS compatible
logic input
No connection
Ground
Ground
CMOS push-pull, common to pin 7
CMOS push-pull, common to pin 6
Supply input, 7V to 18V
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T_A = +25°C with 7V ≤ V_DD ≤ 18V.
Parameters
Sym
Min
Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
V_IH
2.4
1.8
V_IL
—
1.3
I_IN
-10
—
V_OH V_DD – 0.025 —
V_OL
—
—
R_O
—
1.8
—
1.5
Peak Output Current
I_PK
—
6.0
Latch-Up Protection
I_REV
—
0.5
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
t_R
—
23
t_F
—
25
t_D1
—
53
t_D2
—
60
Power Supply Current
I_S
—
3.5
—
0.3
Note 1: Switching times ensured by design.
—
V
0.8
V
10
µA 0V ≤ V_IN ≤ V_DD
—
0.025
2.5
2.5
—
—
V
V
Ω V_IN = 0.8V,
V_OUT = 10 mA, V_DD = 18V
V_IN = 2.4V,
V_OUT = 10 mA, V_DD = 18V
A V_DD = 18V, Figure 4-4
A Duty cycle ≤ 2%, t ≤ 300 µsec,
V_DD = 16V
35 nsec C_L = 2500 pF, Figure 4-1
35 nsec C_L = 2500 pF, Figure 4-1
75 nsec Figure 4-1
75 nsec Figure 4-1
5.0 mA V_IN = 3V
0.5
V_IN = 0V
 2003 Microchip Technology Inc.
DS21416C-page 3