TC426COA713 Datasheet, PDF (3/16 Pages) Microchip Technology – 1.5A Dual High-Speed Power MOSFET Drivers

TC426/TC427/TC428
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage ..................................................... +20V
Input Voltage, Any Terminal
................................... V_DD + 0.3V to GND – 0.3V
Power Dissipation (T_A ≤ 70°C)
PDIP........................................................ 730 mW
CERDIP .................................................. 800 mW
SOIC ....................................................... 470 mW
Derating Factor
PDIP....................................................... 8 mW/°C
CERDIP .............................................. 6.4 mW/°C
SOIC ...................................................... 4 mW/°C
Operating Temperature Range
C Version ........................................ 0°C to +70°C
I Version ....................................... -25°C to +85°C
E Version...................................... -40°C to +85°C
M Version ................................... -55°C to +125°C
Storage Temperature Range.............. -65°C to +150°C
*Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: T_A = +25°C with 4.5V ≤ V_DD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Input
V_IH
V_IL
I_IN
Output
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_OH
High Output Resistance
R_OL
Low Output Resistance
I_PK
Peak Output Current
Switching Time (Note 1)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
I_S
Power Supply Current
Note 1: Switching times ensured by design.
2.4
—
—
—
-1
—
V_DD – 0.025
—
—
—
—
10
—
6
—
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
1
—
0.025
15
10
—
30
30
50
75
8
0.4
V
V
μA
V
V
Ω
Ω
A
nsec
nsec
nsec
nsec
mA
Test Conditions
0V ≤ V_IN ≤ V_DD
I_OUT = 10 mA, V_DD = 18V
I_OUT = 10 mA, V_DD = 18V
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
V_IN = 3V (Both Inputs)
V_IN = 0V (Both Inputs)
© 2006 Microchip Technology Inc.
DS21415C-page 3