TC2054_06 Datasheet, PDF (3/18 Pages) Microchip Technology – 50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

TC2054/2055/2186
ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V_IN = V_R + 1V, I_L = 100 µA, C_L = 3.3 µF, SHDN > V_IH, T_A = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameter
Sym
Min
Typ
Max Units
Conditions
Output Noise
eN
Response Time
t_R
(from Shutdown Mode)
SHDN Input
SHDN Input High Threshold V_IH
SHDN Input Low Threshold V_IL
ERROR OUTPUT
Minimum V_IN Operating
Voltage
V_INMIN
Output Logic Low Voltage V_OL
ERROR Threshold Voltage
ERROR Positive Hysteresis
V_OUT to ERROR Delay
Resistance from ERROR to
GND
V_TH
V_HYS
t_DELAY
R_ERROR
—
600
—
nV / I_L = I_OUTMAX, F = 10 kHz
√Hz
—
60
—
µs V_IN = 4V
C_IN = 1 µF, C_OUT = 10 µF
I_L = 0.1 mA, Note 9
60
—
—
%V_IN V_IN = 2.5V to 6.0V
—
—
15
%V_IN V_IN = 2.5V to 6.0V
1.0
—
—
—
—
400
—
0.95 x V_R
—
—
50
—
—
2
—
—
126
—
V I_OL = 0.1 mA
mV 1 mA Flows to ERROR,
I_OL = 1 mA, V_IN = 2V
V See Figure 4-2
mV Note 8
ms V_OUT from V_R = 3V to 2.8V
Ω V_DD = 2.5V, V_OUT = 2.5V
Note 1: The minimum V_IN has to meet two conditions: V_IN = 2.7V and V_IN = V_R + V_DROPOUT.
2: V_R is the regulator output voltage setting. For example: V_R = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3: TCV_OUT = _{(---V----O-----U-----T----M------A----X------–----V----O------U----T----M------I--N-----)---×-----1----0---}6_--
VOUT × ΔT
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
at a 1V differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I_MAX at V_IN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T_A, T_J, θ_JA).
8: Hysteresis voltage is referenced by V_R.
9: Time required for V_OUT to reach 95% of V_R (output voltage setting), after V_SHDN is switched from 0 to V_IN.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, V_DD = +2.7V to +6.0V and V_SS = GND.
Parameters
Sym
Min
Typ
Max
Temperature Ranges:
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
T_A
-40
—
+125
T_A
-40
—
+125
T_A
-65
—
+150
θ_JA
—
255
—
Units
°C
°C
°C
°C/W
Conditions
© 2006 Microchip Technology Inc.
DS21663C-page 3