TC1265 Datasheet, PDF (3/16 Pages) Microchip Technology – 800 mA Fixed-Output CMOS LDO with Shutdown

TC1265
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, V_IN = V_R + 1.5V, (Note 1), I_L = 100 µA, C_L = 3.3 µF,
SHDN > V_IH, T_A = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
SHDN Input
SHDN Input High Threshold
SHDN Input Low Threshold
ERROR Output (SOIC Only)
V_IH
45
—
—
%V_IN
V_IL
—
—
15
%V_IN
Minimum Operating Voltage
V_MIN
1.0
—
—
V
Output Logic Low Voltage
V_OL
—
—
400
mV 1 mA Flows to ERROR
ERROR Threshold Voltage
V_TH
—
0.95 x V_R
—
V
ERROR Positive Hysteresis
V_HYS
—
50
—
mV Note 8
Note
1: V_R is the regulator output voltage setting.
2: The minimum V_IN has to justify the conditions: V_IN ≥ V_R + V_DROPOUT and V_IN ≥ 2.7V for I_L = 0.1 mA to I_OUTMAX.
3:
TCV_OUT
=
(_---V_{----O----U---T---M-----A---X----–-----}V_{----O---U----T---M----I--N----})_{---–-----}1_---0_---⁶_-
V_OUT × ∆T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects
are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value
measured at a 1.5V differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temper-
ature and the thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipa-
tion causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8: Hysteresis voltage is referenced to V_R.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V_IN = V_R + 1.5V, I_L = 100 µA, C_L = 3.3 µF,
SHDN > V_IH, T_A = +25°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
T_A
-40
—
+125
°C (Note 1)
T_J
-40
—
+125
°C
T_A
-65
—
+150
°C
Thermal Resistance, 5L-DDPAK
θ_JA
—
57
—
°C/W
Thermal Resistance, 5L-TO-220
θ_JA
—
71
—
°C/W
Thermal Resistance, 8L-SOIC
θ_JA
—
163
—
°C/W
Note 1: Operation in this range must not cause T_J to exceed Maximum Junction Temperature (+125°C).
 2004 Microchip Technology Inc.
DS21376C-page 3