TC1070 Datasheet, PDF (3/16 Pages) TelCom Semiconductor, Inc – 50mA ADJUSTABLE CMOS LDO WITH SHUTDOWN

TC1070/TC1071/TC1187
TC1070/TC1071/TC1187 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: V_IN = V_OUT + 1V, I_L = 0.1mA, C_L = 3.3µF, SHDN > V_IH, T_A = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
SHDN Input
V_IH
V_IL
ADJ Input
SHDN Input High Threshold
SHDN Input Low Threshold
45
—
—
%V_IN V_IN = 2.5V to 6.5V
—
—
15
%V_IN V_IN = 2.5V to 6.5V
I_ADJ
Adjust Input Leakage Current
—
50
—
pA
Note 1: TC V_OUT = (V_OUTMAX – V_OUTMIN) x 10⁶
V_OUT x ∆T
2: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
3: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
4: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 msec.
5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
6: The minimum V_IN has to justify the conditions: V_IN ≥ V_R + V_DROPOUT and V_IN ≥ 2.7V for I_L = 0.1mA to I_OUTMAX.
© 2002 Microchip Technology Inc.
DS21353B-page 3