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TC1031 Datasheet, PDF (3/12 Pages) TelCom Semiconductor, Inc – LINEAR BUILDING BLOCK - LOW POWER COMPARATOR AND VOLTAGE REFERENCE | |||
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TC1031
TC1031 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Typical values apply at 25°C and VDD = 3.0V; TA = -40° to +85°C, and VDD = 1.8V to 5.5V, unless
otherwise specified.
Symbol
Parameter
Min
Typ
Max Units
Test Conditions
Voltage Reference
VREF
Reference Voltage
1.176
1.200 1.224
V
IREF(SOURCE) Source Current
50
â
â
µA
IREF(SINK)
Sink Current
50
â
â
µA
ROUT (SD) Output Resistance in Shutdown
20
â
â
M⦠SHDN = VSS
COUT (SD) Output Capacitance in Shutdown
â
â
5
pF SHDN = VSS
TSEL
Select Time
â
200
â
µsec REF Valid from SHDN = VIH
RL = 100k⦠to VSS
TDESEL
Deselect Time
â
10
â
µsec REF Invalid from SHDN = VIL
RL = 100kâ¦
CL(REF)
Load Capacitance
â
â
100
pF
EVREF
Voltage Noise
â
20
â
µVRMS 100Hz to 100kHz
eVREF
Noise Density
â
10
â
µV/âHz 1kHz
Note 1: VOS is measured as (VUT + VLT â 2VREF)/2 where VUT is the upper hysteresis threshold and VLT is the lower hysteresis threshold with
VREF â VHYST set to 10mV. This represents the asymmetry of the hysteresis thresholds around VREF
© 2002 Microchip Technology Inc.
DS21342B-page 3
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