MCP1640 Datasheet, PDF(3/32 Page) Microchip Technology – 0.65V Start-up Synchronous Boost Regulator with True Output Disconnect or Input/Output Bypass Option

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MCP1640 Datasheet, PDF (3/32 Pages) Microchip Technology – 0.65V Start-up Synchronous Boost Regulator with True Output Disconnect or Input/Output Bypass Option

◁

MCP1640/B/C/D

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings â

EN, FB, VIN, VSW, VOUT - GND ........................... +6.5V

EN, FB ...........<greater of VOUT or VIN > (GND - 0.3V)

Output Short Circuit Current....................... Continuous

Output Current Bypass Mode........................... 400 mA

Power Dissipation ............................ Internally Limited

Storage Temperature .........................-65oC to +150oC

Ambient Temp. with Power Applied......-40oC to +85oC

Operating Junction Temperature........-40oC to +125oC

ESD Protection On All Pins:

HBM........................................................ 3 kV

MM........................................................ 300 V

â Notice: Stresses above those listed under âMaximum

Ratingsâ may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operational sections of this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 ÂµF, L = 4.7 ÂµH, VOUT = 3.3V, IOUT = 15 mA,

TA = +25Â°C.

Boldface specifications apply over the TA range of -40oC to +85oC.

Parameters

Sym

Min

Typ

Max Units

Conditions

Input Characteristics

Minimum Start-Up Voltage

VIN

0.65

0.8

V Note 1

Minimum Input Voltage After

VIN

0.35

V Note 1

Start-Up

Output Voltage Adjust Range

Maximum Output Current

Feedback Voltage

Feedback Input Bias Current

Quiescent Current â PFM

Mode

VOUT

2.0

IOUT

100

VFB

IVFB

IQPFM

1.175

150

350

1.21

5.5

1.245

V VOUT ï³ VIN; Note 2

mA 1.2V VIN, 2.0V VOUT

mA 1.5V VIN, 3.3V VOUT

mA 3.3V VIN, 5.0V VOUT

Vâ

pA â

ÂµA Measured at VOUT = 4.0V;

EN = VIN, IOUT = 0 mA;

Note 3

Quiescent Current â PWM

Mode

IQPWM

220

Quiescent Current â Shutdown IQSHDN

0.7

ÂµA Measured at VOUT; EN = VIN

IOUT = 0 mA; Note 3

2.3

ÂµA VOUT = EN = GND;

Includes N-Channel and

P-Channel Switch Leakage

NMOS Switch Leakage

INLK

0.3

ÂµA VIN = VSW = 5V; VOUT =

5.5V VEN = VFB = GND

PMOS Switch Leakage

IPLK

0.05

0.2

ÂµA VIN = VSW = GND;

VOUT = 5.5V

NMOS Switch ON Resistance RDS(ON)N â

0.6

ï VIN = 3.3V, ISW = 100 mA

PMOS Switch ON Resistance RDS(ON)P â

0.9

ï VIN = 3.3V, ISW = 100 mA

Note 1: 3.3 Kï resistive load, 3.3VOUT (1 mA).

2: For VIN > VOUT, VOUT will not remain in regulation.

3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be

estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).

4: 220ï resistive load, 3.3VOUT (15 mA).

5: Peak current limit determined by characterization, not production tested.

ï£ 2010 Microchip Technology Inc.

DS22234A-page 3

▷