TC3827 Datasheet, PDF (2/10 Pages) Microchip Technology – Lithium-Ion Battery Charger

Lithium-Ion Battery Charger
TC3827
ABSOLUTE MAXIMUM RATINGS*
Input Voltage (V_IN), V_OUT, V_SNS, MODE, and I_MON ...........
.............................................................. –0.3V to 6.0V
SHDN ...............................................–0.3V to (V_IN + 0.3V)
8-Pin MSOP (derate 4.1mW/°C above +70°C) ..... 330mW
Operating Ambient Temperature Range .. –20°C to +85°C
Storage Temperature Range ................. –65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Vapor Phase (60 sec) ........................................... +210°C
Infrared (15 sec) .................................................... +220°C
I_IMON (source) ......................................................0.375mA
I_MODE (sink) .............................................................. 20mA
I_DRV ............................................................................1mA
ESD Rating ................................................................. 2kV
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS: V_IN = [V_REG + 1V] , T_A = -20°C to +85°C, unless otherwise noted. Typical values
at T_A = +25°C, R_SENSE = 500mΩ, Test Circuit Figure 3.
Symbol
Parameter
Test Conditions
Min Typ
Max Units
I_VIN
Power Supply Current
Shutdown Mode, V_SHDN = 0V
Constant Voltage Mode
—
1
15
µA
—
350
560
V_IN
Power Supply Voltage In
Voltage Regulation (Constant Voltage Mode)
4.5
—
5.5
V
V_REG
Battery Regulation Volts
3827- 4.2VUA
3827- 4.1VUA
—
4.2
—
V
—
4.1
—
V_OUT
Output Voltage Accuracy
LI_REG
Line Regulation
LD_REG
Load Regulation
ID_ISCH
Output Reverse Leakage
MOSFET Gate Drive
V_IN = V_REG + 1V to 5.5V,
V_IN = 4.5V to 5.5V, I_OUT = 75mA
I_OUT =10mA to 75mA
V_IN = Floating, V_OUT = V_REG
–1
—
+1
%
–10
—
+10
mV
–1
±0.2
+1
mV
—
1
5
µA
I_DRV
Gate Drive Current
Sink, Constant Voltage Mode (Note 1)
—
—
1
mA
Source, Constant Voltage Mode (Note 1) 0.08
—
—
V_DRV
Gate Drive Min Voltage
Current Sense Amp
—
1.0
—
V
V_GAIN
V_CS
I_SC
K
GAIN (∆V_GS/∆V_OUT)
Current Limit Threshold
Short Circuit Current
KFactor
(V_IN – V_SNS) @ I_MAX
—
100
—
dB
40
53
75
mV
—
46
—
mA
—
0.46
—
A/A
MODE
V_TH
Mode Threshold
V_OL
Mode Low Voltage
I_SINK = 10mA, V_OUT = 3.5V
I_LK
Mode Leakage Current
V_MODE = 5.5V, I_O = 0mA,
MODE = Constant Voltage
—
V_REG
—
V
—
—
400
mV
—
—
+1
µA
SHDN
V_IH
V_IL
I_LK
I_MON
∆V_IMON
∆(V_IN - V_SNS)
SHDN High Threshold
SHDN Low Threshold
SHDN Leakage Current
Current Sense Gain
V_SHDN = 0V to 5V
V_O = 0V to 3.5V,R_L > 20kΩ
40
—
–
—
—
—
—
26
—
%V_DD
25
%V_DD
+1
µA
—
V/V
Notes: 1. Where V_OUT = 1% from Nominal, continuous current.
TC3827-2 12/12/00
2
© 2001 Microchip Technology Inc. DS21558A