TC2015-50VCTTR Datasheet, PDF (2/20 Pages) Microchip Technology – 50 mA, 100 mA, 150 mA CMOS LDOs with

TC2014/2015/2185
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ................................................................... 7.0V
Output Voltage ....................................... (– 0.3) to (V_IN + 0.3)
Operating Temperature ......................... – 40°C < T_J < 125°C
Storage Temperature.................................. – 65°C to +150°C
Maximum Voltage on Any Pin ................ V_IN +0.3V to – 0.3V
Maximum Junction Temperature ...................... ............ 150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, V_IN = V_R + 1V, I_L = 100 µA, C_OUT = 3.3 µF, SHDN > V_IH, T_A = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Operating Voltage
V_IN
2.7
—
6.0
V Note 1
Maximum Output
Current
I_OUTMAX
50
—
100
—
—
mA TC2014
—
TC2015
150
—
—
TC2185
Output Voltage
V_OUT Temperature
Coefficient
V_OUT
TCV_OUT
V_R – 2.0% V_R ± 0.4% V_R + 2.0% V Note 2
—
20
—
ppm/°C Note 3
—
40
—
Line Regulation
Load Regulation
(Note 4)
Dropout Voltage
Supply Current
Shutdown Supply
Current
ΔV_OUT/ΔV_IN
—
ΔV_OUT/V_OUT
-1.0
-2.0
V_IN – V_OUT
—
—
—
—
I_IN
—
I_INSD
—
0.05
0.33
0.43
2
45
90
140
55
0.05
0.5
+1.0
+2.0
—
70
140
210
80
0.5
% (V_R + 1V) < V_IN < 6V
% TC2014;TC2015: I_L = 0.1 mA to I_OUTMAX
TC2185: I_L = 0.1 mA to I_OUTMAX (Note 4)
mV Note 5
I_L = 100 µA
I_L = 50 mA
TC2015; TC2185 I_L = 100 mA
TC2185
I_L = 150 mA
µA SHDN = V_IH, I_L = 0
µA SHDN = 0V
Power Supply
Rejection Ratio
PSRR
—
55
—
dB F ≤ 1 kHz, Cbypass = 0.01 µF
Output Short Circuit
I_OUTSC
—
160
300
mA V_OUT = 0V
Current
Note 1: The minimum V_IN has to meet two conditions: V_IN = 2.7V and V_IN = V_R + V_DROPOUT.
2: V_R is the regulator output voltage setting. For example: V_R = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
TCV_OUT
=
(_---V_{----O---U----T---M----A---X----–-----}V_{----O---U----T---M----I--N---})_----×_----1_----0_---–---⁶_-
V_OUT × ΔT
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I_MAX at V_IN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. T_A, T_J, θ_JA).
8: Time required for V_OUT to reach 95% of V_R (output voltage setting), after V_SHDN is switched from 0 to V_IN.
DS21662E-page 2
© 2006 Microchip Technology Inc.