TC1306_07 Datasheet, PDF (2/18 Pages) Microchip Technology – Dual 150mA CMOS LDO With Select Mode™ Operation, Shutdown and RESET Output

TC1306
1.0 ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (V_IN + 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ......... V_IN +0.3V to -0.3V
Operating Temperature Range.... -40°C < T_J < +125°C
Storage Temperature Range ..............-65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1306 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: V_IN = V_R + 1V, I_L = 100μA, C_L = 3.3μF, SHDN1 > V_IH, SHDN2 > V_IH, T_A = 25°C, unless otherwise noted.
Boldface type specifications apply for junction temperature of -40°C to +125°C. Applies to both V_OUT1 and V_OUT2.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V_IN
I_OUTMAX
V_OUT
TCV_OUT
Input Operating Voltage
Maximum Output Current
Output Voltage (V_OUT1 and V_OUT2)
V_OUT Temperature Coefficient
2.7
150
V_R – 2.5%
—
—
—
6.0
V Note 1
—
—
mA Per Channel
V_R ± 0.5% V_R + 2.5% V Note 2
20
—
ppm/°C Note 3
40
—
ΔV_OUT/ΔV_IN Line Regulation
ΔV_OUT/V_OUT Load Regulation
—
0.05
0.35
% (V_R + 1V) < V_IN < 6V
—
0.3
2
% I_L = 0.1mA to I_OUTMAX
(Note 4)
V_{IN –} V_OUT Dropout Voltage
—
2
—
mV I_L = 100μA
45
120
I_L = 50mA
85
240
I_L = 100mA
125
360
I_L = 150mA, (Note 5)
I_IN
Supply Current
—
120
200
μA SHDN1, SHDN2 = V_IH, I_L = 0
I_INSD
Shutdown Supply Current
—
0.05
0.5
μA SHDN1, SHDN2 = 0V
PSRR
Power Supply Rejection Ratio
—
55
—
dB F_RE ≤ 120Hz
IOUTSC
Output Short Circuit Current
—
450
—
mA V_OUT = 0V
ΔV_OUTΔP_D Thermal Regulation
—
0.04
—
V/W Notes 6, 7
t_WK
Wake Up Time
(from Shutdown Mode)
—
10
—
μsec V_IN = 5V
C_IN = 1μF, C_OUT = 4.7μF
I_L = 30mA, (See Figure 4-1)
ts
Settling Time
(from Shutdown Mode)
—
40
—
μsec V_IN = 5V
C_IN = 1μF, C_OUT = 4.7μF
I_L = 30mA, (See Figure 4-1)
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V_IN has to meet two conditions: V_IN ≥ 2.7 and V_IN = V_R + V_DROPOUT.
V_R is the regulator output voltage setting. For example: V_R = 2.8V, 3.0V.
T_C V_OUT = (V_OUTMAX – V_OUTMIN) x 10⁶
V_OUT x ΔT
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation
specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 Thermal Considerations section of this data sheet for more details.
DS21527C-page 2
© 2007 Microchip Technology Inc.