TC1268 Datasheet, PDF (2/12 Pages) Microchip Technology – 500mA Fixed Output, Fast Response CMOS LDO with Shutdown

TC1268
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........ V_IN +0.3V to -0.3V
Operating Temperature ............... -40°C < T_J < +125°C
Storage Temperature.......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1268 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: V_IN = V_OUT + 1V, I_L = 100µA, C_L = 3.3µF, SHDN > V_IH, T_A = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V_IN
I_OUTMAX
V_OUT
Input Operating Voltage
Maximum Output Current
Output Voltage
∆V_OUT/∆T
∆V_OUT/∆V_IN
∆VOUT/VOUT
V_IN-V_OUT
V_OUT Temperature Coefficient
Line Regulation
Load Regulation
Dropout Voltage
I_DD
I_SHDN
T_WK
Supply Current (Active Mode)
Supply Current (Shutdown Mode)
Wake-up Time
(from Shutdown Mode)
T_S
Settling Time
PSRR
I_OUTSC
∆V_OUT/∆P_D
eN
(from Shutdown Mode)
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Output Noise
2.7
500
—
V_R – 2.5%
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V_R ±0.5%
—
40
0.05
0.002
20
60
200
350
80
5
5
15
64
1200
0.04
260
6.0
—
—
V_R + 2.5%
—
0.35
0.01
30
160
480
800
130
—
10
—
—
1400
—
—
V
mA
V
ppm/°C
%
%/mA
mV
µA
µA
µsec
µsec
dB
mA
V/W
nV/√Hz
Note 8
Note 1
Note 2
(V_R + 1V) ≤ V_IN ≤ 6V
I_L = 0.1mA to IOUT_MAX (Note 3)
I_L = 100µA
I_L = 100mA
I_L = 300mA
I_L = 500mA (Note 4)
SHDN = V_IH, I_L = 0
SHDN = 0V
V_IN = 3.5V, V_OUT = 2.5V
C_IN = C_OUT = 1µF
I_L = 250mA (See Figure 3-2)
V_IN = 3.5V, V_OUT = 2.5V
C_IN = C_OUT = 1µF
I_L = 250mA (See Figure 3-2)
F_RE ≤ 1kHz
V_OUT = 0V
Note 5
I_L = I_OUTMAX
SHDN Input
V_IH
V_IL
Note 1:
2:
3:
4:
5:
6:
7:
8:
SHDN Input High Threshold
45
—
—
%V_IN
SHDN Input Low Threshold
—
—
15
%V_IN
V_R is the regulator output voltage setting.
T_C V_OUT = (V_OUTMAX – V_OUTMIN) x 10⁶
V_OUT x ∆T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation
specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Hysteresis voltage is referenced to V_R.
The minimum V_IN has to justify the conditions: V_IN ≥ V_R + V_DROPOUT and V_IN ≥ 2.7V for I_L = 0.1mA to I_OUTMAX.
DS21379B-page 2
© 2002 Microchip Technology Inc.