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TC1263 Datasheet, PDF (2/14 Pages) Microchip Technology – 500mA Fixed Output CMOS LDO with Shutdown
TC1263
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Voltage.................. (VSS – 0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature.......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1263 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VIN
IOUTMAX
VOUT
Input Operating Voltage
Maximum Output Current
Output Voltage
∆VOUT/∆T
∆VOUT/∆VIN
∆VOUT/VOUT
VIN-VOUT
VOUT Temperature Coefficient
Line Regulation
Load Regulation
Dropout Voltage
IDD
ISHDN
PSRR
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
IOUTSC
∆VOUT/∆PD
eN
Output Short Circuit Current
Thermal Regulation
Output Noise
SHDN Input
VIH
SHDN Input High Threshold
VIL
SHDN Input Low Threshold
ERROR Output (SOIC Only)
VMIN
VOL
VTH
VHYS
Minimum Operating Voltage
Output Logic Low Voltage
ERROR Threshold Voltage
ERROR Positive Hysteresis
2.7
500
—
VR – 2.5%
—
—
—
—
—
—
—
—
—
—
—
—
—
—
VR ±0.5%
—
40
0.05
0.002
20
60
200
350
80
0.05
64
1200
0.04
260
6.0
—
—
VR + 2.5%
—
0.35
0.01
30
130
390
650
130
1
—
1400
—
—
V
mA
V
ppm/°C
%
%/mA
mV
µA
µA
dB
mA
V/W
nV/√Hz
Note 8
Note 1
Note 2
(VR + 1V) ≤ VIN ≤ 6V
IL = 0.1mA to IOUTMAX (Note 3)
IL = 100µA
IL = 100mA
IL = 300mA
IL = 500mA (Note 4)
SHDN = VIH, IL = 0
SHDN = 0V
FRE ≤ 1kHz
VOUT = 0V
Note 5
IL = IOUTMAX
60
—
—
%VIN
—
—
15
%VIN
1.0
—
—
—
—
400
—
0.95 x VR
—
—
50
—
V
mV 1 mA Flows to ERROR
V
mV Note 7
Note 1: VR is the regulator output voltage setting.
2: TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ∆T
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V
differential.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
7: Hysteresis voltage is referenced to VR.
8: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX.
DS21374B-page 2
© 2002 Microchip Technology Inc.