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TC1034 Datasheet, PDF (2/16 Pages) Microchip Technology – Linear Building Block . Single Operational Amplifiers in SOT Packages
TC1034/TC1035
1.0 ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................6.0V
Voltage on Any Pin .......... (VSS – 0.3V) to (VDD + 0.3V)
Junction Temperature....................................... +150°C
Operating Temperature Range............. -40°C to +85°C
Storage Temperature Range .............. -55°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1034/TC1035 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = -40° to +85°C and VDD = 1.8V to 5.5V, unless otherwise specified. Typical values apply at 25°C.
Minimum and maximum values apply for VDD = 3.0V.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VDD
Supply Voltage
Shutdown Input (TC1035 Only)
VIH
VIL
ISI
Op Amp
Input High Threshold
Input Low Threshold
Shutdown Input Current (Note 1)
IQ
ISHDN
Supply Current, Operating (Note 1)
Supply Current, Shutdown Mode
(Note 1)
ROUT(SD) Output Resistance in Shutdown
(Note 1)
COUT(SD) Output Capacitance in Shutdown
(Note 1)
TSEL
TDESEL
AVOL
VICMR
VOS
Select Time
(VOUT from SHDN = VIH) (Note 1)
Deselect Time
(VOUT from SHDN = VIL) (Note 1)
Large Signal Voltage Gain
Common Mode Input Voltage Range
Input Offset Voltage (Note 1)
1.8
80% VDD
—
—
—
—
20
—
—
—
—
VSS – 0.2
IB
Input Bias Current
-100
VOS(DRIFT) Input Offset Voltage Drift
—
GBWP
Gain Bandwidth Product
—
SR
Slew Rate
—
VOUT
CMRR
Output Signal Swing
Common Mode Rejection Ratio
PSRR
Power Supply Rejection Ratio
Note 1: TC1035 only.
VSS + 0.05
70
80
—
—
—
—
6
0.05
—
—
15
20
100
—
±100
±0.3
50
±4
90
35
—
—
—
5.5
V
—
V
20% VDD
V
±100
nA
10
µA Output Open, SHDN = VDD
0.1
µA SHDN = VSS
—
MΩ SHDN = VSS
5
pF SHDN = VSS
—
µsec RL=10kΩ to VSS
—
nsec RL=10kΩ to VSS
—
VDD + 0.2
±500
±1.5
100
—
—
—
VDD – 0.05
—
—
V/mV
V
µV
mV
pA
µV/°C
kHz
mV/µsec
V
dB
dB
RO = 10kΩ, VDD = 5V
VDD = 3V, VCM = 1.5V, TA = 25°C
TA = -40°C to 85°C
TA = 25°C;
VCM = VDD to VSS
VDD = 3V; VCM = 1.5V
VDD = 1.8V to 5.5V;
VO = VDD to VSS
CL = 100pF,
RL = 1MΩ to GND,
Gain = 1,
VIN = VSS to VDD
RL = 10kΩ
TA = 25°C; VDD = 5V
VCM = VDD to VSS
TA = 25°C, VCM = VSS
VDD = 1.8V to 5V
DS21343B-page 2
© 2002 Microchip Technology Inc.