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TC1031_05 Datasheet, PDF (2/14 Pages) Microchip Technology – Linear Building Block - Low Power Voltage Reference with Programmable Hysteresis Comparator and Shutdown
TC1031
1.0 ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................6.0V
Voltage on Any Pin .......... (VSS – 0.3V) to (VDD + 0.3V)
Junction Temperature....................................... +150°C
Operating Temperature Range.............-40°C to +85°C
Storage Temperature Range ..............-55°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1031 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Typical values apply at 25°C and VDD = 3.0V; TA = -40° to +85°C, and VDD = 1.8V to 5.5V, unless
otherwise specified.
Symbol
Parameter
Min
Typ
Max Units
Test Conditions
VDD
IQ
ISHDN
Supply Voltage
Supply Current, Operating
Supply Current, Shutdown
1.8
—
5.5
V
—
6
10
μA All Outputs Open, SHDN = VDD
—
—
0.1
μA SHDN = VSS
Shutdown Input
VIH
VIL
ISI
Comparator
Input High Threshold
Input Low Threshold
Shutdown Input Current
80% VDD
—
—
—
—
V
— 20% VDD
V
—
±100
nA
ROUT (SD) Output Resistance in Shutdown
20
—
—
MΩ SHDN = VSS
COUT (SD) Output Capacitance in Shutdown
—
—
5
pF SHDN = VSS
TSEL
Select Time
—
20
—
μsec VOUT Valid from SHDN = VIH
RL=10kΩ to VSS
TDESEL
Deselect Time
—
500
—
nsec VOUT Invalid from SHDN = VIL
RL=10kΩ to VSS
VICMR
Common-Mode Input Voltage Range VSS – 0.2
— VDD + 0.2 V
VOS
Input Offset Voltage (Note 1)
–5
—
+5
mV VDD = 3V, VCM = 1.5V
IB
Input Bias Current
—
—
±100
pA TA = 25°C
IN+, IN- = VDD to VSS
VOH
Output High Voltage
VDD – 0.3
—
—
V RL = 10kΩ to VSS
VOL
Output Low Voltage
—
—
0.3
V RL = 10kΩ to VDD
CMRR
Common Mode Rejection Ratio
66
—
—
dB TA = 25°C, VDD = 5V
VCM = VDD to VSS
PSRR
Power Supply Rejection Ratio
60
—
—
dB TA = 25°C, VDD = 1.8V to 5V
VCM = 1.2V
ISRC
Output Source Current
1
—
—
mA IN+ = VDD, IN- = VSS
VDD = 1.8V,
Output Shorted to VSS
ISINK
Output Sink Current
2
—
—
mA IN+ = VSS, IN- = VDD,
VDD = 1.8V,
Output Shorted to VDD
VHYST
Voltage Range at HYST Pin
VREF – 0.08 —
VREF
V
IHYST
Hysteresis Input Current
—
—
±100
nA
tPD1
Response Time
—
4
—
μsec 100mV Overdrive; CL = 100pF
tPD2
Response Time
—
6
—
μsec 100mV Overdrive; CL = 100pF
Note 1: VOS is measured as (VUT + VLT – 2VREF)/2 where VUT is the upper hysteresis threshold and VLT is the lower hysteresis threshold with
VREF – VHYST set to 10mV. This represents the asymmetry of the hysteresis thresholds around VREF
DS21342C-page 2
© 2005 Microchip Technology Inc.