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TC1030 Datasheet, PDF (2/14 Pages) TelCom Semiconductor, Inc – LINEAR BUILDING BLOCK - QUAD LOW POWER OP AMP
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TC1030
1.0 ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................6.0V
Voltage on Any Pin .......... (VSS – 0.3V) to (VDD + 0.3V)
Junction Temperature....................................... +150°C
Operating Temperature Range............. -40°C to +85°C
Storage Temperature Range .............. -55°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1030 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Typical values apply at 25°C and VDD = 3.0V; TA = -40° to +85°C, and VDD = 1.8V to 5.5V, unless
otherwise specified.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VDD
Supply Voltage
Shutdown Inputs
VIH
Input High Threshold
VIL
Input Low Threshold
ISI
Shutdown Input Current,
SHDNB or SHDNC/D
Op Amps
IQ
Supply Current, Operating
1.8
80% VDD
—
—
—
ISHDN
Supply Current Shutdown Mode
—
ROUT(SD) Output Resistance in Shutdown
20
COUT(SD) Out Capacitance in Shutdown
—
TSEL
Select Time
—
(VOUT from SHDNB, SHDNC/D) = VIL
TDESEL Deselect Time
—
(VOUT from SHDNB, SHDNC/D) = VIL
AVOL
Large Signal Voltage Gain
—
GBWP Gain-Bandwidth Product
—
VICMR
VOS
Common Mode Input Voltage Range
Input Offset Voltage
VSS – 0.2
IB
Input Bias Current
-100
VOS(DRIFT) Input Offset Voltage Drift
—
SR
Slew Rate
—
VOUT
CMRR
Output Signal Swing
Common Mode Rejection Ratio
PSRR Power Supply Rejection Ratio
VSS + 0.05
70
80
—
—
—
—
20
6
—
—
15
20
100
90
—
±100
±0.3
50
±4
35
—
—
—
5.5
V
—
V
20% VDD
V
±100
nA
32
µA All Outputs Open,
SHDNB = VDD,
SHDNC/D = VDD
10
µA SHDNB = VSS,
SHDNC/D = VSS
—
MΩ SHDNB = VSS,
SHDNC/D = VSS
5
pF SHDNB = VSS,
SHDNC/D = VSS
—
µsec RL = 10kΩ to VSS
—
nsec RL = 10kΩ to VSS
—
V/mV RL = 10kΩ, VDD = 5V
—
kHz VDD = 1.8V to 5.5V;
VO = VDD to VSS
VDD + 0.2
V
±500
±1.5
µV VDD = 3V, VCM = 1.5V, TA = 25°C,
mV TA = –40°C to 85°C
100
pA TA = 25°C;
VCM = VDD to VSS
—
µV/°C VDD = 3V; VCM = 1.5V
—
mV/µsec CL = 100pF;
RL = 1 MΩ to GND,
Gain = 1
VIN = VSS to VDD
VDD – 0.05 V RL = 10kΩ
—
dB TA = 25°C; VDD = 5V;
VCM = VDD to VSS
—
dB TA = 25°C; VCM = VSS;
VDD = 1.8V to 5V
DS21341B-page 2
© 2002 Microchip Technology Inc.
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