TC1016_05 Datasheet, PDF (2/22 Pages) Microchip Technology – 80 mA, Tiny CMOS LDO With Shutdown

TC1016
1.0 ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .........................................................6.5V
Power Dissipation................ Internally Limited (Note 7)
Operating Temperature ................. -40°C < T_J < 125°C
Storage Temperature......................... -65°C to +150°C
Maximum Voltage On Any Pin........V_IN + 0.3V to -0.3V
*Notice: Static-sensitive device. Unused devices must be
stored in conductive material. Protect devices from static dis-
charge and static fields. Stresses above those listed under
Absolute Maximum Ratings may cause permanent damage to
the device. These are stress ratings only and functional oper-
ation of the device at these or any other conditions above
those indicated in the operational sections of the
specifications is not implied. Exposure to Absolute Maximum
Rating Conditions for extended periods may affect device
reliability
ELECTRICAL CHARACTERISTICS
V_IN = V_R + 1V, I_L = 100 µA, C_L = 1.0µF, SHDN > V_IH, T_A = 25°C, unless otherwise noted. Boldface type specifications apply for
junction temperatures of – 40°C to +125°C.
Parameter
Sym
Min
Typ
Max
Units
Test Conditions
Input Operating Voltage
Maximum Output Current
Output Voltage
V_OUT Temperature Coefficient
Line Regulation
Load Regulation (Note 4)
Dropout Voltage (Note 5)
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Wake-Up Time
(from Shutdown mode)
V_IN
I_OUTMAX
V_OUT
TCV_OUT
(ΔV_OUT/ΔV_IN)/V_R
ΔV_OUT/V_R
V_IN – V_OUT
I_IN
I_INSD
PSRR
t_WK
2.7
80
V_R – 2.5%
—
—
—
—
—
—
—
—
—
—
—
—
V_R ±0.5%
40
0.01
0.23
2
100
150
53
0.05
58
10
6.0
—
V_R + 2.5%
—
0.2
1
—
200
300
90
0.5
—
—
V Note 1
mA
V Note 2
ppm/°C Note 3
%/V (V_R + 1V) < V_IN < 6V
% I_L = 0.1 mA to I_OUTMAX
mV I_L = 100 µA
I_L = 50 mA
I_L = 80 mA
µA SHDN = V_IH, I_L = 0
µA SHDN = 0V
dB f =1 kHz, I_L = 50 mA
µs V_IN = 5V, I_L = 60 mA,
C_IN = 1 µF, C_OUT = 1 µF,
f = 100 Hz
Settling Time
(from Shutdown Mode)
t_S
—
32
—
µs V_IN = 5V, I_L = 60 mA,C_IN =
1 µF, C_OUT = 1 µF, f =
100 Hz
Output Short Circuit Current
I_OUTSC
—
120
—
mA V_OUT = 0V
Thermal Regulation
V_OUT/P_D
—
0.04
—
V/W Notes 6, 7
Thermal Shutdown Die
Temperature
T_SD
—
160
—
°C
Thermal Shutdown Hysteresis
Output Noise
ΔT_SD
eN
—
10
—
°C
—
800
—
nV/√Hz f = 10 kHz
SHDN Input High Threshold
V_IH
60
—
—
SHDN Input Low Threshold
V_IL
—
—
15
Note 1: The minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ (V_R + 2.5%)+V_DROPOUT.
2: V_R is the regulator voltage setting. For example: V_R = 1.8V, 2.7V, 2.8V, 3.0V.
3:
TCVOUT
=
(_---V_{----O-----U----T----M------A----X-----–----}V_{----O-----U-----T----M-----I---N----})_----×_{----1---0----6-}
VOUT × ΔT
%V_IN V_IN = 2.7V to 6.0V
%V_IN V_IN = 2.7V to 6.0V
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal
Regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to Ilmax at V_IN = 6V for t = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable juction temperature and the
thermal resistance from junction-to-air (i.e. T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” of this data sheet for more details.
DS21666B-page 2
© 2005 Microchip Technology Inc.