23LCV512 Datasheet, PDF (2/30 Pages) Microchip Technology – 512 Kbit SPI Serial SRAM with Battery Backup and SDI Interface

23LCV512
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings ^(†)
VCC.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature under bias ...............................................................................................................-40°C to +85°C
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1: DC CHARACTERISTICS
DC CHARACTERISTICS
Industrial (I):
TA = -40°C to +85°C
Param.
No.
Sym.
Characteristic
Min. Typ.⁽¹⁾ Max. Units
Test Conditions
D001 VCC
D002 VIH
D003 VIL
D004 VOL
D005 VOH
Supply voltage
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
2.5
.7 VCC
—
5.5
V 23LCV512
— VCC +0.3 V
-0.3
— 0.10xVCC V 23LCV512
—
—
0.2
V IOL = 1 mA
VCC -0.5 —
—
V IOH = -400 A
D006 ILI
Input leakage
current
—
—
±1
A CS = VCC, VIN = VSS OR VCC
D007
D008
ILO
Output leakage
current
ICC Read Operating current
—
—
—
3
±1
A CS = VCC, VOUT = VSS OR VCC
10
mA FCLK = 20 MHz; SO = O, 5.5V
D009 ICCS
Standby current
—
4
10
A CS = VCC = 5.5V, Inputs tied to
VCC or VSS
D010 CINT
Input capacitance
—
—
7
pF VCC = 0V, f = 1 MHz, Ta = 25°C
(Note 1)
D011 VDR
RAM data retention
—
1.0
—
V (Note 2)
voltage
D012 VTRIP VBAT Change Over
1.6
1.8
2.0
V Typical at Ta = 25°C
(Note 1)
D013 VBAT
VBAT Voltage Range 1.4
—
3.6
V (Note 1)
D014 IBAT
VBAT Current
—
1
—
A Typical at 2.5V, Ta = 25°C
(Note 1)
Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room
temperature (25°C).
2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically
sampled and not 100% tested.
DS25157A-page 2
Preliminary
 2012 Microchip Technology Inc.