PIC16C57-HS-P Datasheet, PDF (137/192 Pages) Microchip Technology – EPROM/ROM-Based 8-bit CMOS Microcontroller Series

PIC16C5X
17.2 DC Characteristics: PIC16C54C/C55A/C56A/C57C/C58B-04E, 20E (Extended)
PIC16CR54C/CR56A/CR57C/CR58B-04E, 20E (Extended)
PIC16C54C/C55A/C56A/C57C/C58B-04E, 20E
PIC16CR54C/CR56A/CR57C/CR58B-04E, 20E
(Extended)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40C  TA  +125C for extended
Param
No.
Symbol
Characteristic
Min Typ† Max Units
Conditions
D001
D002
VDD Supply Voltage
RC, XT, LP, and HS mode
3.0 — 5.5 V from 0 - 10 MHz
4.5 — 5.5 V from 10 - 20 MHz
VDR RAM Data Retention Voltage⁽¹⁾ — 1.5* — V Device in SLEEP mode
D003
VPOR VDD start voltage to ensure
Power-on Reset
— Vss — V See Section 5.1 for details on
Power-on Reset
D004
D010
D020
SVDD
IDD
IPD
VDD rise rate to ensure
Power-on Reset
Supply Current⁽²⁾
XT and RC⁽³⁾ modes
HS mode
Power-down Current⁽²⁾
0.05* —
— V/ms See Section 5.1 for details on
Power-on Reset
— 1.8 3.3 mA FOSC = 4.0 MHz, VDD = 5.5V
— 9.0 20 mA FOSC = 20 MHz, VDD = 5.5V
— 0.3 17 A VDD = 3.0V, WDT disabled
— 10 50* A VDD = 4.5V, WDT disabled
— 12 60* A VDD = 5.5V, WDT disabled
— 4.8 31* A VDD = 3.0V, WDT enabled
— 18 68* A VDD = 4.5V, WDT enabled
— 26 90* A VDD = 5.5V, WDT enabled
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5V, 25C, unless otherwise stated. These parameters are for design guidance only,
and are not tested.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on
the current consumption.
a) The test conditions for all IDD measurements in active Operation mode are: OSC1 = external square
wave, from rail-to-rail; all I/O pins tristated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/
disabled as specified.
b) For standby current measurements, the conditions are the same, except that the device is in SLEEP
mode. The power-down current in SLEEP mode does not depend on the oscillator type.
3: Does not include current through REXT. The current through the resistor can be estimated by the formula:
IR = VDD/2REXT (mA) with REXT in k.
 1997-2013 Microchip Technology Inc.
Preliminary
DS30453E-page 137