PIC16C5X Datasheet, PDF (121/217 Pages) Microchip Technology – EPROM/ROM-Based 8-Bit CMOS Microcontroller Series

PIC16CR57B
PIC16C5X
15.3 DC Characteristics: PIC16LCR57B-04 (Commercial)
PIC16LCR57B-04I (Industrial)
DC Characteristics
Power Supply Pins
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
0°C ≤ TA ≤ +70°C (commercial)
–40°C ≤ TA ≤ +85°C (industrial)
Characteristic
Sym Min Typ⁽¹⁾ Max Units
Conditions
Supply Voltage
VDD 2.5
RAM Data Retention Voltage⁽²⁾ VDR —
VDD Start Voltage to ensure
Power-on Reset
VPOR —
— 6.25
1.5* —
VSS
—
V LP option
V Device in SLEEP mode
V See Section 7.4 for details on
Power-on Reset
VDD Rise Rate to ensure
Power-on Reset
Supply Current⁽³⁾
Commercial
Industrial
SVDD 0.05* —
IDD
— 12
— 15
— V/ms See Section 7.4 for details on
Power-on Reset
28
µA FOSC = 32 kHz, VDD = 2.5V,
WDT disabled
37
µA FOSC = 32 kHz, VDD = 2.5V,
WDT disabled
Power-Down Current⁽⁵⁾
IPD
Commercial
Industrial
3.5
12
µA VDD = 2.5V, WDT enabled
0.2 4.0 µA VDD = 2.5V, WDT disabled
3.5
14
µA VDD = 2.5V, WDT enabled
0.2 5.0 µA VDD = 2.5V, WDT disabled
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guidance
only and is not tested.
2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on
the current consumption.
a) The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through Rext. The current through the resistor can be estimated by the
formula: IR = VDD/2Rext (mA) with Rext in kΩ.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.
© 1998 Microchip Technology Inc.
Preliminary
DS30453B-page 121