PIC16C55-XT Datasheet, PDF (110/194 Pages) Microchip Technology – EPROM/ROM-Based 8-bit CMOS Microcontroller Series

PIC16C5X
15.3 DC Characteristics: PIC16LV54A-02 (Commercial)
PIC16LV54A-02I (Industrial)
PIC16LV54A-02
PIC16LV54A-02I
(Commercial, Industrial)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature 0°C ≤ TA ≤ +70°C for commercial
–20°C ≤ TA ≤ +85°C for industrial
Param
No.
Symbol
Characteristic
Min Typ† Max Units
Conditions
D001
D002
D003
D004
D010
D020
*
Supply Voltage
VDD RC and XT modes
2.0 — 3.8
VDR RAM Data Retention
Voltage⁽¹⁾
— 1.5* —
VPOR VDD Start Voltage to ensure —
Power-on Reset
Vss —
SVDD
IDD
IPD
VDD Rise Rate to ensure
Power-on Reset
Supply Current⁽²⁾
RC⁽³⁾ and XT modes
LP mode, Commercial
LP mode, Industrial
Power-down Current^(2,4)
Commercial
Commercial
Industrial
Industrial
0.05* — —
— 0.5 —
— 11 27
— 14 35
— 2.5 12
— 0.25 4.0
— 3.5 14
— 0.3 5.0
These parameters are characterized but not tested.
V
V Device in SLEEP mode
V See Section 5.1 for details on
Power-on Reset
V/ms See Section 5.1 for details on
Power-on Reset
mA FOSC = 2.0 MHz, VDD = 3.0V
µA FOSC = 32 kHz, VDD = 2.5V WDT disabled
µA FOSC = 32 kHz, VDD = 2.5V WDT disabled
µA VDD = 2.5V, WDT enabled
µA VDD = 2.5V, WDT disabled
µA VDD = 2.5V, WDT enabled
µA VDD = 2.5V, WDT disabled
† Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guid-
ance only and is not tested.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
a) The test conditions for all IDD measurements in active Operation mode are: OSC1 = external square
wave, from rail-to-rail; all I/O pins tristated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/
disabled as specified.
b) For standby current measurements, the conditions are the same, except that the device is in SLEEP
mode. The power-down current in SLEEP mode does not depend on the oscillator type.
3: Does not include current through REXT. The current through the resistor can be estimated by the formula:
IR = VDD/2REXT (mA) with REXT in kΩ.
4: The oscillator start-up time can be as much as 8 seconds for XT and LP oscillator selection on wake-up from
SLEEP mode or during initial power-up.
DS30453D-page 108
Preliminary
© 2002 Microchip Technology Inc.