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| VP2450 Datasheet, PDF (1/14 Pages) Supertex, Inc – P-Channel Enhancement-Mode Vertical DMOS FETs | |||
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VP2450
P-Channel Enhancement-Mode Vertical DMOS FET
Features
⢠Free from Secondary Breakdown
⢠Low Power Drive Requirement
⢠Ease of Paralleling
⢠Low CISS and Fast Switching Speeds
⢠High Input Impedance and High Gain
⢠Excellent Thermal Stability
⢠Integral Source-drain Diode
Applications
⢠Motor Controls
⢠Converters
⢠Amplifiers
⢠Switches
⢠Power Supply Circuits
⢠Drivers: Relays, Hammers, Solenoids, Lamps,
Memory, Displays, Bipolar Transistors, etc.
General Description
The VP2450 is a low-threshold, Enhancement-mode
(normally-off) transistor that utilizes a vertical
Double-diffused Metal-Oxide Semiconductor (DMOS)
structure and a well-proven silicon gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal
runaway and thermally induced secondary breakdown.
This Vertical DMOS Field-Effect Transistor (FET) is
ideally suited to a wide range of switching and
amplifying applications where very low threshold
voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
Package Types
TO-92
SOURCE
DRAIN
See Table 3-1 for pin information.
GATE
SOT-89
DRAIN
SOURCE
DRAIN
GATE
ï£ 2016 Microchip Technology Inc.
DS20005569A-page 1
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