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SST25WF040B Datasheet, PDF (1/39 Pages) Microchip Technology – 4 Mbit 1.8V SPI Serial Flash | |||
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SST25WF040B
4 Mbit 1.8V SPI Serial Flash
Features
⢠Single Voltage Read and Write Operations
- 1.65-1.95V
⢠Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
⢠High Speed Clock Frequency
- 40MHz
⢠Dual Input/Output Support
- Fast-Read Dual-Output Instruction (3BH)
- Fast-Read Dual I/O Instruction (BBH)
⢠Superior Reliability
- Endurance: 100,000 Cycles
- Greater than 20 years Data Retention
⢠Ultra-Low Power Consumption:
- Active Read Current: 4 mA (typical)
- Standby Current: 10 μA (typical)
- Power-down Mode Standby Current: 4 μA (typical)
⢠Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 64 KByte overlay blocks
⢠Page Program Mode
- 256 Bytes/Page
⢠Fast Erase and Page-Program:
- Chip-Erase Time: 400 ms (typical)
- Sector-Erase Time: 40 ms (typical)
- Block-Erase Time: 80 ms (typical)
- Page-Program Time: 0.8 ms/ 256 bytes (typical)
⢠End-of-Write Detection
- Software polling the BUSY bit in Status Register
⢠Hold Pin (HOLD#)
- Suspend a serial sequence without deselecting the
device
⢠Write Protection (WP#)
- Enables/Disables the Lock-Down function of the
status register
⢠Software Write Protection
- Write protection through Block-Protection bits in
status register
⢠Temperature Range
- Industrial: -40°C to +85°C
⢠Packages Available
- 8-lead SOIC (150 mils)
- 8-contact USON (2mm x 3mm)
⢠All devices are RoHS compliant
Product Description
SST25WF040B is a member of the Serial Flash 25
Series family and feature a four-wire, SPI-compatible
interface that allows for a low pin-count package which
occupies less board space and ultimately lowers total
system costs. SPI serial flash memory is manufactured
with proprietary, high-performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide
tunneling injector attain better reliability and manufac-
turability compared with alternate approaches.
This Serial Flash significantly improve performance
and reliability, while lowering power consumption. The
device writes (Program or Erase) with a single power
supply of 1.65-1.95V. The total energy consumed is a
function of the applied voltage, current, and time of
application. Since for any given voltage range, the
SuperFlash technology uses less current to program
and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less
than alternative flash memory technologies.
SST25WF040B is offered in 8-lead SOIC and 8-contact
USON packages. See Figure 2-1 for the pin assign-
ments.
ï£ 2014 Microchip Technology Inc.
DS20005193C-page 1
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