SST25VF040B Datasheet, PDF (1/31 Pages) Silicon Storage Technology, Inc – 4 Mbit SPI Serial Flash

SST25VF040B
4 Mbit SPI Serial Flash
Features
• Single Voltage Read and Write Operations
- 2.7-3.6V
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
- Up to 50 MHz
• Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read Current: 10 mA (typical)
- Standby Current: 5 µA (typical)
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 32 KByte overlay blocks
- Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
- Chip-Erase Time: 35 ms (typical)
- Sector-/Block-Erase Time: 18 ms (typical)
- Byte-Program Time: 7 µs (typical)
• Auto Address Increment (AAI) Programming
- Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
- Software polling the BUSY bit in Status Register
- Busy Status readout on SO pin in AAI Mode
• Hold Pin (HOLD#)
- Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
- Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
- Write protection through Block-Protection bits in
status register
• Temperature Range
- Commercial: 0°C to +70°C
- Industrial: -40°C to +85°C
• Packages Available
- 8-lead SOIC (200 mils)
- 8-lead SOIC (150 mils)
- 8-contact WSON (6mm x 5mm)
• All devices are RoHS compliant
Product Description
The 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ulti-
mately lowers total system costs. The SST25VF040B
devices are enhanced with improved operating fre-
quency and even lower power consumption.
SST25VF040B SPI serial flash memories are manu-
factured with proprietary, high-performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
SST25VF040B devices significantly improve perfor-
mance and reliability, while lowering power consump-
tion. The devices write (Program or Erase) with a single
power supply of 2.7-3.6V for SST25VF040B. The total
energy consumed is a function of the applied voltage,
current, and time of application. Since for any given
voltage range, the SuperFlash technology uses less
current to program and has a shorter erase time, the
total energy consumed during any Erase or Program
operation is less than alternative flash memory technol-
ogies.
The SST25VF040B device is offered in an 8-lead SOIC
(200 mils), 8-lead SOIC (150 mils), and 8-contact
WSON (6mm x 5mm) packages. See Figure 2-1 for pin
assignments.
 2015 Microchip Technology Inc.
DS20005051C-page 1