SST12LP19E_14 Datasheet, PDF (1/24 Pages) Microchip Technology – 2.4 GHz High-Gain, High-Efficiency Power Amplifier

2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E
Data Sheet
SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power,
high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n
and 256 QAM applications. For WLAN applications, it typically provides 25 dB gain
with 34% power-added efficiency. SST12LP19E has excellent linearity while meet-
ing 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at 23 dBm.
This power amplifier includes a power detector with dB-wise linear voltage output
and features easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin. SST12LP19E and is offered in 6-
contact XSON, 8-contact XSON, and 6-contact X2SON packages. Due to its small
package size and high efficiency, this power amplifier is also well suited for ZigBee^®
and Bluetooth^® applications.
Features
• Excellent RF Stability with Moderate Gain:
– Typically 25 dB gain across 2.4 – 2.5 GHz
• High linear output power:
– >26 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 6
– Meets 802.11g OFDM ACPR requirement up to 23.5
dBm
– 3% EVM up to 18 dBm (high-efficiency configuration) or
~3% EVM up to 19.5 dBm (high-power configuration) for
54 Mbps 802.11g signal
– 2.5% EVM up to 16.5 dBm for MCS7–20 MHz band-
width
– 1.8% EVM up to 16 dBm for MCS9–40 MHz bandwidth
– Meets 802.11b ACPR requirement up to 23 dBm
• High power-added efficiency/Low operating cur-
rent for 802.11b/g/n applications
– ~34%/200 mA @ P_OUT = 23.5 dBm for 802.11g
– ~31%/195 mA @ P_OUT = 23 dBm for 802.11b
• Single-pin low I_REF power-up/down control
– I_REF <2 mA
• Low idle current
– ~40-65 mA I_CQ, depending on package type and config-
uration.
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low Shut-down Current (~2 µA)
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Excellent On-chip power detection
– 20 dB dynamic range on-chip power detection
– dB-wise linear output voltage
– Temperature stable and load insensitive
• Simple input/output matching
• Packages available
– 8-contact XSON – 2mm x 2mm x 0.5 mm max
– 6-contact XSON – 1.5mm x 1.5mm x 0.5 mm max
– 6-contact X2SON – 1.5mm x 1.5mm x 0.4mm max
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n/256 QAM)
• Bluetooth
• ZigBee
• Cordless phones
• 2.4 GHz ISM wireless equipment
© 2014
www.microchip.com
DS70005041D
08/14